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Enhanced Characteristics of Square-Shaped Extended Source TFET Via Silicon Carbide Polytype (3C-SiC) and a Dopant Pocket Layer

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نرم افزار کتابخانه دیجیتال "دی اسپیس" فارسی شده توسط یابش برای کتابخانه های ایرانی | تماس با یابش