Impact of the channel thickness on the performance of Schottky barrier metal–oxide–semiconductor field-effect transistors
Year
: 2002DOI: 10.1063/1.1513657
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Impact of the channel thickness on the performance of Schottky barrier metal–oxide–semiconductor field-effect transistors
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| contributor author | Knoch, J. | |
| contributor author | Appenzeller, J. | |
| date accessioned | 2020-03-14T21:44:09Z | |
| date available | 2020-03-14T21:44:09Z | |
| date issued | 2002 | |
| identifier other | KosDlhwfNPr2SUftg7LABhfMyvjGHlcjt3AowAkZfVlUtKQSZX.pdf | |
| identifier uri | https://libsearch.um.ac.ir:443/fum/handle/fum/1759222?locale-attribute=en | |
| format | general | |
| language | English | |
| title | Impact of the channel thickness on the performance of Schottky barrier metal–oxide–semiconductor field-effect transistors | |
| type | Journal Paper | |
| contenttype | Fulltext | |
| contenttype | Fulltext | |
| identifier padid | 12498519 | |
| identifier doi | 10.1063/1.1513657 | |
| coverage | Academic | |
| pages | 3082-0 | |
| journal volume | 81 | |
| journal issue | 16 | |
| filesize | 691370 | |
| citations | 2 |