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Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a ‘sol–gel on chip’ process

Author:
Banger, K. K.
,
Yamashita, Y.
,
Mori, K.
,
Peterson, R. L.
,
Leedham, T.
,
Rickard, J.
,
Sirringhaus, H.
Year
: 2010
DOI: 10.1038/nmat2914
URI: https://libsearch.um.ac.ir:443/fum/handle/fum/1729024
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    Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a ‘sol–gel on chip’ process

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contributor authorBanger, K. K.
contributor authorYamashita, Y.
contributor authorMori, K.
contributor authorPeterson, R. L.
contributor authorLeedham, T.
contributor authorRickard, J.
contributor authorSirringhaus, H.
date accessioned2020-03-14T19:06:19Z
date available2020-03-14T19:06:19Z
date issued2010
identifier otherggHyL6vRh2jwCp4E2ENIq_l5u9NNrQWHq5wiNJT5W4Ev4LEISB.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1729024
formatgeneral
languageEnglish
titleLow-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a ‘sol–gel on chip’ process
typeJournal Paper
contenttypeFulltext
contenttypeFulltext
identifier padid12328705
identifier doi10.1038/nmat2914
coverageAcademic
pages45-50
journal volume10
journal issue1
filesize1461015
citations2
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