High-frequency self-aligned graphene transistors with transferred gate stacks
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, , , , , , , , ,سال
: 2012شناسه الکترونیک: 10.1073/pnas.1205696109
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آمار بازدید
High-frequency self-aligned graphene transistors with transferred gate stacks
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contributor author | Cheng, R. | |
contributor author | Bai, J. | |
contributor author | Liao, L. | |
contributor author | Zhou, H. | |
contributor author | Chen, Y. | |
contributor author | Liu, L. | |
contributor author | Lin, Y.-C. | |
contributor author | Jiang, S. | |
contributor author | Huang, Y. | |
contributor author | Duan, X. | |
date accessioned | 2020-03-14T02:40:26Z | |
date available | 2020-03-14T02:40:26Z | |
date issued | 2012 | |
identifier other | 0HBTq3faFGY5Pf25JG8j9SZPZzCs0cZXiRcPWJ4fvtgJ5fKxx1.pdf | |
identifier uri | https://libsearch.um.ac.ir:443/fum/handle/fum/1516682?locale-attribute=fa | |
format | general | |
language | English | |
title | High-frequency self-aligned graphene transistors with transferred gate stacks | |
type | Journal Paper | |
contenttype | Fulltext | |
contenttype | Fulltext | |
identifier padid | 11080750 | |
identifier doi | 10.1073/pnas.1205696109 | |
coverage | Academic | |
pages | 11588-11592 | |
journal volume | 109 | |
journal issue | 29 | |
filesize | 1674226 | |
citations | 1 |