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High-frequency self-aligned graphene transistors with transferred gate stacks

contributor authorCheng, R.
contributor authorBai, J.
contributor authorLiao, L.
contributor authorZhou, H.
contributor authorChen, Y.
contributor authorLiu, L.
contributor authorLin, Y.-C.
contributor authorJiang, S.
contributor authorHuang, Y.
contributor authorDuan, X.
date accessioned2020-03-14T02:40:26Z
date available2020-03-14T02:40:26Z
date issued2012
identifier other0HBTq3faFGY5Pf25JG8j9SZPZzCs0cZXiRcPWJ4fvtgJ5fKxx1.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1516682?locale-attribute=en&show=full
formatgeneral
languageEnglish
titleHigh-frequency self-aligned graphene transistors with transferred gate stacks
typeJournal Paper
contenttypeFulltext
contenttypeFulltext
identifier padid11080750
identifier doi10.1073/pnas.1205696109
coverageAcademic
pages11588-11592
journal volume109
journal issue29
filesize1674226
citations1


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