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Improvement in Reliability of Tunneling Field-Effect Transistor With p-n-i-n Structure

contributor authorWei Cao
contributor authorYao, C.J.
contributor authorJiao, G.F.
contributor authorDaming Huang
contributor authorYu, H.Y.
contributor authorMing-Fu Li
date accessioned2020-03-13T14:38:59Z
date available2020-03-13T14:38:59Z
date issued2011
identifier other0HccOtzSrPcQaohtHT6WT_G3LSbWVwIRynbYVCucwCJSr7rEX1.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1337931?locale-attribute=fa&show=full
formatgeneral
languageEnglish
titleImprovement in Reliability of Tunneling Field-Effect Transistor With p-n-i-n Structure
typeJournal Paper
contenttypeFulltext
contenttypeFulltext
identifier padid9965433
identifier doi10.1109/ted.2011.2144987
coverageAcademic
pages2122-2126
journal volume58
journal issue7
filesize625661
citations1


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