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RF Performance of Proton-Irradiated AlGaN/GaN HEMTs

contributor authorJin Chen
contributor authorEn Xia Zhang
contributor authorCher Xuan Zhang
contributor authorMcCurdy, Michael W.
contributor authorFleetwood, D.M.
contributor authorSchrimpf, R.D.
contributor authorKaun, Stephen W.
contributor authorKyle, Erin C. H.
contributor authorSpeck, James S.
date accessioned2020-03-13T00:28:22Z
date available2020-03-13T00:28:22Z
date issued2014
identifier issn0018-9499
identifier other6949163.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1148025?locale-attribute=fa&show=full
formatgeneral
languageEnglish
publisherIEEE
titleRF Performance of Proton-Irradiated AlGaN/GaN HEMTs
typeJournal Paper
contenttypeMetadata Only
identifier padid8331075
subject keywordsIII-V semiconductors
subject keywordsS-parameters
subject keywordsaluminium compounds
subject keywordsgallium compounds
subject keywordshigh electron mobility transistors
subject keywordsmolecular beam epitaxial growth
subject keywordsnitrogen compounds
subject keywordsradiation hardening (electronics)
subject keywordswide band gap semiconductors
subject keywordsAlGaN-GaN
subject keywordsAlGaN-GaN high electron mobility transistors
subject keywordsDC transconductance
subject keywordsHEMT
subject keywordsNH3-rich MBE devices
subject keywordsNH<
subject keywordssub>
subject keywords3<
subject keywords/sub>
subject keywordsRF gain
subject keywordsRF power-current gain
subject keywordscutoff frequency
subject keywordselectron volt energy 1.8 MeV
subject keywordsfast bulk
subject keywordsimpedance mismatch
subject keywordsmaximum oscillation frequ
identifier doi10.1109/TNS.2014.2362872
journal titleNuclear Science, IEEE Transactions on
journal volume61
journal issue6
filesize1245014
citations0


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