RF Performance of Proton-Irradiated AlGaN/GaN HEMTs
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سال
: 2014شناسه الکترونیک: 10.1109/TNS.2014.2362872
کلیدواژه(گان): III-V semiconductors,S-parameters,aluminium compounds,gallium compounds,high electron mobility transistors,molecular beam epitaxial growth,nitrogen compounds,radiation hardening (electronics),wide band gap semiconductors,AlGaN-GaN,AlGaN-GaN high electron mobility transistors,DC transconductance,HEMT,NH3-rich MBE devices,NH<,sub>,3<,/sub>,RF gain,RF power-current gain,cutoff frequency,electron volt energy 1.8 MeV,fast bulk,impedance mismatch,maximum oscillation frequ
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RF Performance of Proton-Irradiated AlGaN/GaN HEMTs
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| contributor author | Jin Chen | |
| contributor author | En Xia Zhang | |
| contributor author | Cher Xuan Zhang | |
| contributor author | McCurdy, Michael W. | |
| contributor author | Fleetwood, D.M. | |
| contributor author | Schrimpf, R.D. | |
| contributor author | Kaun, Stephen W. | |
| contributor author | Kyle, Erin C. H. | |
| contributor author | Speck, James S. | |
| date accessioned | 2020-03-13T00:28:22Z | |
| date available | 2020-03-13T00:28:22Z | |
| date issued | 2014 | |
| identifier issn | 0018-9499 | |
| identifier other | 6949163.pdf | |
| identifier uri | https://libsearch.um.ac.ir:443/fum/handle/fum/1148025?locale-attribute=fa | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | RF Performance of Proton-Irradiated AlGaN/GaN HEMTs | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8331075 | |
| subject keywords | III-V semiconductors | |
| subject keywords | S-parameters | |
| subject keywords | aluminium compounds | |
| subject keywords | gallium compounds | |
| subject keywords | high electron mobility transistors | |
| subject keywords | molecular beam epitaxial growth | |
| subject keywords | nitrogen compounds | |
| subject keywords | radiation hardening (electronics) | |
| subject keywords | wide band gap semiconductors | |
| subject keywords | AlGaN-GaN | |
| subject keywords | AlGaN-GaN high electron mobility transistors | |
| subject keywords | DC transconductance | |
| subject keywords | HEMT | |
| subject keywords | NH3-rich MBE devices | |
| subject keywords | NH< | |
| subject keywords | sub> | |
| subject keywords | 3< | |
| subject keywords | /sub> | |
| subject keywords | RF gain | |
| subject keywords | RF power-current gain | |
| subject keywords | cutoff frequency | |
| subject keywords | electron volt energy 1.8 MeV | |
| subject keywords | fast bulk | |
| subject keywords | impedance mismatch | |
| subject keywords | maximum oscillation frequ | |
| identifier doi | 10.1109/TNS.2014.2362872 | |
| journal title | Nuclear Science, IEEE Transactions on | |
| journal volume | 61 | |
| journal issue | 6 | |
| filesize | 1245014 | |
| citations | 0 |