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A Diamond:H/MoO<sub>3</sub> MOSFET

contributor authorVardi, Alon
contributor authorTordjman, Maurice
contributor authordel Alamo, Jesus /A/.
contributor authorKalish, Rafi
date accessioned2020-03-13T00:27:17Z
date available2020-03-13T00:27:17Z
date issued2014
identifier issn0741-3106
identifier other6936920.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1147358?locale-attribute=fa&show=full
formatgeneral
languageEnglish
publisherIEEE
titleA Diamond:H/MoO<sub>3</sub> MOSFET
typeJournal Paper
contenttypeMetadata Only
identifier padid8330302
subject keywordsMOSFET
subject keywordsdiamond
subject keywordsmolybdenum compounds
subject keywordssemiconductor doping
subject keywords2D hole gas
subject keywordsdrain-current ON-OFF ratio
subject keywordsgate control
subject keywordsgate insulator
subject keywordsgate length devices
subject keywordsheterointerface
subject keywordsheterostructure system
subject keywordshydrogenated-diamond transfer doping
subject keywordsmaximum transconductance
subject keywordsp-type MOSFET
subject keywordspotentially-improved temperature stability
subject keywordssize 3.5 mum
subject keywordsConductivity
subject keywordsDiamonds
subject keywordsDoping
subject keywordsLogic gates
subject keywordsMOSFET
subject keywordsSurface treatment
subject keywordsDiamond:H
subject keywordsDiamond:H, MoO_{3}
subject keywordsMOSFET
subject keywordsMoO3
subject keywordssurface transfer doping
identifier doi10.1109/LED.2014.2364832
journal titleElectron Device Letters, IEEE
journal volume35
journal issue12
filesize555654
citations0


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