Temperature-Dependent Internal Quantum Efficiency of Blue High-Brightness Light-Emitting Diodes
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سال
: 2014شناسه الکترونیک: 10.1109/JQE.2014.2359958
کلیدواژه(گان): Auger effect,III-V semiconductors,brightness,gallium compounds,indium compounds,light emitting diodes,ABC-model,Auger recombination coefficients,IQE,InGaN-GaN,LED,blue high-brightness light emitting diodes,chip designs,emission efficiency,external quantum efficiency,light extraction efficiency,radiative recombination coefficients,temperature 13 K to 440 K,temperature-dependent internal quantum efficiency,thermal degradation,Current measurement,Light emitting diodes,Semicond
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Temperature-Dependent Internal Quantum Efficiency of Blue High-Brightness Light-Emitting Diodes
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| contributor author | Titkov, Ilya E. | |
| contributor author | Karpov, Sergey Yu | |
| contributor author | Yadav, Ankesh | |
| contributor author | Zerova, Vera L. | |
| contributor author | Zulonas, Modestas | |
| contributor author | Galler, Bastian | |
| contributor author | Strassburg, Martin | |
| contributor author | Pietzonka, Ines | |
| contributor author | Lugauer, Hans-Juergen | |
| contributor author | Rafailov, E.U. | |
| date accessioned | 2020-03-13T00:24:02Z | |
| date available | 2020-03-13T00:24:02Z | |
| date issued | 2014 | |
| identifier issn | 0018-9197 | |
| identifier other | 6910236.pdf | |
| identifier uri | https://libsearch.um.ac.ir:443/fum/handle/fum/1145332 | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | Temperature-Dependent Internal Quantum Efficiency of Blue High-Brightness Light-Emitting Diodes | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8328056 | |
| subject keywords | Auger effect | |
| subject keywords | III-V semiconductors | |
| subject keywords | brightness | |
| subject keywords | gallium compounds | |
| subject keywords | indium compounds | |
| subject keywords | light emitting diodes | |
| subject keywords | ABC-model | |
| subject keywords | Auger recombination coefficients | |
| subject keywords | IQE | |
| subject keywords | InGaN-GaN | |
| subject keywords | LED | |
| subject keywords | blue high-brightness light emitting diodes | |
| subject keywords | chip designs | |
| subject keywords | emission efficiency | |
| subject keywords | external quantum efficiency | |
| subject keywords | light extraction efficiency | |
| subject keywords | radiative recombination coefficients | |
| subject keywords | temperature 13 K to 440 K | |
| subject keywords | temperature-dependent internal quantum efficiency | |
| subject keywords | thermal degradation | |
| subject keywords | Current measurement | |
| subject keywords | Light emitting diodes | |
| subject keywords | Semicond | |
| identifier doi | 10.1109/JQE.2014.2359958 | |
| journal title | Quantum Electronics, IEEE Journal of | |
| journal volume | 50 | |
| journal issue | 11 | |
| filesize | 2218566 | |
| citations | 0 |