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Sb-Doped S/D Ultrathin Body Ge-On Insulator nMOSFET Fabricated by Improved Ge Condensation Process

contributor authorKim, W.-K.
contributor authorKuroda, K.
contributor authorTakenaka, Mitsuru
contributor authorTakagi, Shinichi
date accessioned2020-03-13T00:21:47Z
date available2020-03-13T00:21:47Z
date issued2014
identifier issn0018-9383
identifier other6894571.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1143897?locale-attribute=en&show=full
formatgeneral
languageEnglish
publisherIEEE
titleSb-Doped S/D Ultrathin Body Ge-On Insulator nMOSFET Fabricated by Improved Ge Condensation Process
typeJournal Paper
contenttypeMetadata Only
identifier padid8326540
subject keywordsMOSFET
subject keywordsannealing
subject keywordsantimony
subject keywordscarrier mobility
subject keywordscondensation
subject keywordselemental semiconductors
subject keywordsgermanium
subject keywordssemiconductor doping
subject keywordsGOI inversion type nMOSFET
subject keywordsGe:Sb
subject keywordscondensation process
subject keywordshole concentration
subject keywordssolid phase diffusion doping
subject keywordsspin-on-glass technology
subject keywordstemperature 650 C
subject keywordsultrathin body germanium-on-insulator nMOSFET
subject keywordsAnnealing
subject keywordsAtomic layer deposition
subject keywordsFabrication
subject keywordsJunctions
subject keywordsMOSFET circuits
subject keywordsOxidation
subject keywordsSilicon
subject keywordsGe condensation
subject keywordsGe-on-insulator (GOI)
subject keywordsMOSFETs
subject keywordsSb doping
subject keywordsgermanium
subject keywordsmobility
subject keywordssol
identifier doi10.1109/TED.2014.2350457
journal titleElectron Devices, IEEE Transactions on
journal volume61
journal issue10
filesize2094743
citations0


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