Stress Analysis in a Si<sub>1-<italic>x</italic></sub>Ge<sub><italic>x</italic></sub>-Channel-Transistor by Scanning Moiré Fringe Imaging
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سال
: 2014شناسه الکترونیک: 10.1109/LED.2014.2346586
کلیدواژه(گان): Ge-Si alloys,moire fringes,scanning electron microscopy,semiconductor device measurement,strain measurement,transistors,transmission electron microscopy,Si<,sub>,1-x<,/sub>,Ge<,sub>,x<,/sub>,electronic device,high-angle annular dark-field scanning transmission electron microscopy,longitudinal direction,orthogonal axes,pressure -1.5 GPa,pressure -2.8 GPa,pressure -4.3 GPa,quantitative strain measurement,scanning moire&,#x0301,fringe imaging,strain engineering
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آمار بازدید
Stress Analysis in a Si<sub>1-<italic>x</italic></sub>Ge<sub><italic>x</italic></sub>-Channel-Transistor by Scanning Moir&#x00E9; Fringe Imaging
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| contributor author | Suhyun Kim | |
| contributor author | Younheum Jung | |
| contributor author | Joong Jung Kim | |
| contributor author | Sunyoung Lee | |
| contributor author | Haebum Lee | |
| date accessioned | 2020-03-13T00:21:23Z | |
| date available | 2020-03-13T00:21:23Z | |
| date issued | 2014 | |
| identifier issn | 0741-3106 | |
| identifier other | 6892979.pdf | |
| identifier uri | https://libsearch.um.ac.ir:443/fum/handle/fum/1143653 | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | Stress Analysis in a Si<sub>1-<italic>x</italic></sub>Ge<sub><italic>x</italic></sub>-Channel-Transistor by Scanning Moiré Fringe Imaging | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8326289 | |
| subject keywords | Ge-Si alloys | |
| subject keywords | moire fringes | |
| subject keywords | scanning electron microscopy | |
| subject keywords | semiconductor device measurement | |
| subject keywords | strain measurement | |
| subject keywords | transistors | |
| subject keywords | transmission electron microscopy | |
| subject keywords | Si< | |
| subject keywords | sub> | |
| subject keywords | 1-x< | |
| subject keywords | /sub> | |
| subject keywords | Ge< | |
| subject keywords | sub> | |
| subject keywords | x< | |
| subject keywords | /sub> | |
| subject keywords | electronic device | |
| subject keywords | high-angle annular dark-field scanning transmission electron microscopy | |
| subject keywords | longitudinal direction | |
| subject keywords | orthogonal axes | |
| subject keywords | pressure -1.5 GPa | |
| subject keywords | pressure -2.8 GPa | |
| subject keywords | pressure -4.3 GPa | |
| subject keywords | quantitative strain measurement | |
| subject keywords | scanning moire& | |
| subject keywords | #x0301 | |
| subject keywords | fringe imaging | |
| subject keywords | strain engineering | |
| identifier doi | 10.1109/LED.2014.2346586 | |
| journal title | Electron Device Letters, IEEE | |
| journal volume | 35 | |
| journal issue | 10 | |
| filesize | 688747 | |
| citations | 0 |