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contributor authorQian Wu
contributor authorBayerl, A.
contributor authorPorti, M.
contributor authorMartin-Martinez, J.
contributor authorLanza, Mario
contributor authorRodriguez, Roberto
contributor authorVelayudhan, V.
contributor authorNafria, M.
contributor authorAymerich, X.
contributor authorBargallo Gonzalez, Mireia
contributor authorSimoen, Eddy
date accessioned2020-03-13T00:19:18Z
date available2020-03-13T00:19:18Z
date issued2014
identifier issn0018-9383
identifier other6880443.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1142409?locale-attribute=fa&show=full
formatgeneral
languageEnglish
publisherIEEE
titleA Conductive AFM Nanoscale Analysis of NBTI and Channel Hot-Carrier Degradation in MOSFETs
typeJournal Paper
contenttypeMetadata Only
identifier padid8324936
subject keywordsMOSFET
subject keywordsatomic force microscopy
subject keywordshot carriers
subject keywordsnegative bias temperature instability
subject keywordsstress analysis
subject keywordsCAFM
subject keywordsCHC stresses
subject keywordsMOSFET gate dielectric
subject keywordsbias temperature instability
subject keywordschannel hot-carrier stresses
subject keywordsconductive atomic force microscope
subject keywordselectrical stresses
subject keywordsgate oxide
subject keywordsnanoscale electrical properties
subject keywordsnegative BTI stress
subject keywordsCurrent measurement
subject keywordsDegradation
subject keywordsDielectrics
subject keywordsLogic gates
subject keywordsMOSFET
subject keywordsNanoscale devices
subject keywordsStress
subject keywordsAtomic force microscopy (AFM)
subject keywordsMOSFET
subject keywordschannel hot-carrier (CHC) degradatio
identifier doi10.1109/TED.2014.2341315
journal titleElectron Devices, IEEE Transactions on
journal volume61
journal issue9
filesize894512
citations0


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