The Role of Ti Capping Layer in HfO<sub><italic>x</italic></sub>-Based RRAM Devices
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سال
: 2014شناسه الکترونیک: 10.1109/LED.2014.2334311
کلیدواژه(گان): hafnium compounds,random-access storage,titanium,HfO<,sub>,x<,/sub>,RRAM devices,Ti,capping layer,memory performance,oxygen reservoir,resistive random access memory device,resistive switching,size 10 nm,size 8 nm,Electrodes,Electron devices,Hafnium compounds,Performance evaluation,Resistance,Switches,Nonvolatile memory,Ti capping,Ti capping.,resistive random access memory (RRAM),resistive switching (RS)
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The Role of Ti Capping Layer in HfO<sub><italic>x</italic></sub>-Based RRAM Devices
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| contributor author | Zheng Fang | |
| contributor author | Xin Peng Wang | |
| contributor author | Joon Sohn | |
| contributor author | Bao Bin Weng | |
| contributor author | Zhi Ping Zhang | |
| contributor author | Zhi Xian Chen | |
| contributor author | Yan Zhe Tang | |
| contributor author | Guo-Qiang Lo | |
| contributor author | Provine, J. | |
| contributor author | Wong, S. Simon | |
| contributor author | Wong, H.-S Philip | |
| contributor author | Dim-Lee Kwong | |
| date accessioned | 2020-03-13T00:13:54Z | |
| date available | 2020-03-13T00:13:54Z | |
| date issued | 2014 | |
| identifier issn | 0741-3106 | |
| identifier other | 6856165.pdf | |
| identifier uri | https://libsearch.um.ac.ir:443/fum/handle/fum/1139075 | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | The Role of Ti Capping Layer in HfO<sub><italic>x</italic></sub>-Based RRAM Devices | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8321259 | |
| subject keywords | hafnium compounds | |
| subject keywords | random-access storage | |
| subject keywords | titanium | |
| subject keywords | HfO< | |
| subject keywords | sub> | |
| subject keywords | x< | |
| subject keywords | /sub> | |
| subject keywords | RRAM devices | |
| subject keywords | Ti | |
| subject keywords | capping layer | |
| subject keywords | memory performance | |
| subject keywords | oxygen reservoir | |
| subject keywords | resistive random access memory device | |
| subject keywords | resistive switching | |
| subject keywords | size 10 nm | |
| subject keywords | size 8 nm | |
| subject keywords | Electrodes | |
| subject keywords | Electron devices | |
| subject keywords | Hafnium compounds | |
| subject keywords | Performance evaluation | |
| subject keywords | Resistance | |
| subject keywords | Switches | |
| subject keywords | Nonvolatile memory | |
| subject keywords | Ti capping | |
| subject keywords | Ti capping. | |
| subject keywords | resistive random access memory (RRAM) | |
| subject keywords | resistive switching (RS) | |
| identifier doi | 10.1109/LED.2014.2334311 | |
| journal title | Electron Device Letters, IEEE | |
| journal volume | 35 | |
| journal issue | 9 | |
| filesize | 799218 | |
| citations | 0 |