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Advantages of GaN-Based Light-Emitting Diodes With Polarization-Reduced Chirped Multiquantum Barrier

contributor authorYi An Yin
contributor authorNaiyin Wang
contributor authorGuanghan Fan
contributor authorShuti Li
date accessioned2020-03-13T00:10:56Z
date available2020-03-13T00:10:56Z
date issued2014
identifier issn0018-9383
identifier other6843356.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1137348?locale-attribute=en&show=full
formatgeneral
languageEnglish
publisherIEEE
titleAdvantages of GaN-Based Light-Emitting Diodes With Polarization-Reduced Chirped Multiquantum Barrier
typeJournal Paper
contenttypeMetadata Only
identifier padid8319220
subject keywordsIII-V semiconductors
subject keywordsgallium compounds
subject keywordslight emitting diodes
subject keywordspolarisation
subject keywordsquantum optics
subject keywordsEBL
subject keywordsGaN
subject keywordsPR-CMQB
subject keywordsefficiency droop
subject keywordselectron blocking layer
subject keywordselectron leakage suppression
subject keywordshigh internal quantum efficiency
subject keywordshigh light output power
subject keywordshole injection efficiency
subject keywordslight-emitting diodes
subject keywordspolarization-reduced chirped multiquantum barrier
subject keywordsAluminum gallium nitride
subject keywordsCharge carrier processes
subject keywordsChirp
subject keywordsGallium nitride
subject keywordsLight emitting diodes
subject keywordsPeriodic structures
subject keywordsPower generation
subject keywordsElectron blockin
identifier doi10.1109/TED.2014.2330374
journal titleElectron Devices, IEEE Transactions on
journal volume61
journal issue8
filesize1251267
citations0


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