contributor author | Yi An Yin | |
contributor author | Naiyin Wang | |
contributor author | Guanghan Fan | |
contributor author | Shuti Li | |
date accessioned | 2020-03-13T00:10:56Z | |
date available | 2020-03-13T00:10:56Z | |
date issued | 2014 | |
identifier issn | 0018-9383 | |
identifier other | 6843356.pdf | |
identifier uri | https://libsearch.um.ac.ir:443/fum/handle/fum/1137348?locale-attribute=en&show=full | |
format | general | |
language | English | |
publisher | IEEE | |
title | Advantages of GaN-Based Light-Emitting Diodes With Polarization-Reduced Chirped Multiquantum Barrier | |
type | Journal Paper | |
contenttype | Metadata Only | |
identifier padid | 8319220 | |
subject keywords | III-V semiconductors | |
subject keywords | gallium compounds | |
subject keywords | light emitting diodes | |
subject keywords | polarisation | |
subject keywords | quantum optics | |
subject keywords | EBL | |
subject keywords | GaN | |
subject keywords | PR-CMQB | |
subject keywords | efficiency droop | |
subject keywords | electron blocking layer | |
subject keywords | electron leakage suppression | |
subject keywords | high internal quantum efficiency | |
subject keywords | high light output power | |
subject keywords | hole injection efficiency | |
subject keywords | light-emitting diodes | |
subject keywords | polarization-reduced chirped multiquantum barrier | |
subject keywords | Aluminum gallium nitride | |
subject keywords | Charge carrier processes | |
subject keywords | Chirp | |
subject keywords | Gallium nitride | |
subject keywords | Light emitting diodes | |
subject keywords | Periodic structures | |
subject keywords | Power generation | |
subject keywords | Electron blockin | |
identifier doi | 10.1109/TED.2014.2330374 | |
journal title | Electron Devices, IEEE Transactions on | |
journal volume | 61 | |
journal issue | 8 | |
filesize | 1251267 | |
citations | 0 | |