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Built-in Effective Body-Bias Effect in Ultra-Thin-Body Hetero-Channel III—V-on-Insulator n-MOSFETs

contributor authorChang-Hung Yu
contributor authorPin Su
date accessioned2020-03-13T00:10:15Z
date available2020-03-13T00:10:15Z
date issued2014
identifier issn0741-3106
identifier other6840963.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1136936?locale-attribute=fa&show=full
formatgeneral
languageEnglish
publisherIEEE
titleBuilt-in Effective Body-Bias Effect in Ultra-Thin-Body Hetero-Channel III—V-on-Insulator n-MOSFETs
typeJournal Paper
contenttypeMetadata Only
identifier padid8318725
subject keywordsMOSFET
subject keywordsconduction bands
subject keywordspermittivity
subject keywordssemiconductor-insulator boundaries
subject keywordsconduction band
subject keywordsdrain induced barrier lowering
subject keywordseffective body-bias effect
subject keywordselectron affinity
subject keywordselectrostatic integrity
subject keywordsultra-thin-body hetero-channel n-MOSFET
subject keywordsElectrostatics
subject keywordsLogic gates
subject keywordsMOSFET
subject keywordsMOSFET circuits
subject keywordsPermittivity
subject keywordsSilicon
subject keywordsThreshold voltage
subject keywordsIII-V
subject keywordsUltra-thin-body (UTB)
subject keywordsdrain-induced-barrier-lowering (DIBL)
subject keywordselectrostatic integrity (EI)
subject keywordselectrostatic integrity (EI).
subject keywordshetero-channel
identifier doi10.1109/LED.2014.2328628
journal titleElectron Device Letters, IEEE
journal volume35
journal issue8
filesize771245
citations0


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