Show simple item record

Dopingless super-steep impact ionisation MOS (dopingless-IMOS) based on workfunction engineering

contributor authorSingh, Sushil
contributor authorKondekar, P.N.
date accessioned2020-03-13T00:09:18Z
date available2020-03-13T00:09:18Z
date issued2014
identifier issn0013-5194
identifier other6836733.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1136354?locale-attribute=fa&show=full
formatgeneral
languageEnglish
publisherIET
titleDopingless super-steep impact ionisation MOS (dopingless-IMOS) based on workfunction engineering
typeJournal Paper
contenttypeMetadata Only
identifier padid8318023
subject keywordsMOSFET
subject keywordselectrodes
subject keywordselemental semiconductors
subject keywordsimpact ionisation
subject keywordsion implantation
subject keywordsmasks
subject keywordssilicon
subject keywordstechnology CAD (electronics)
subject keywordsSi
subject keywordscharge plasma
subject keywordscharge plasma formation
subject keywordsdopingless super-steep impact ionisation MOS
subject keywordsdopingless-IMOS
subject keywordsimpact-ionisation metal oxide semiconductor field effect transistor
subject keywordsintrinsic Debye length
subject keywordsintrinsic silicon film
subject keywordsmetal electrode
subject keywordsn-type drain
subject keywordsp-type source
subject keywordsphoto masking
subject keywordsrandom dopant fluctuation
subject keywordstwo-dimensional TCAD Sentaurus
subject keywordswork-function engineering
identifier doi10.1049/el.2014.1072
journal titleElectronics Letters
journal volume50
journal issue12
filesize499441
citations0


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following Collection(s)

Show simple item record