Spatial Correlation Between Efficiency and Crystal Structure in GaN-Based Light-Emitting Diodes Prepared on High-Aspect Ratio Patterned Sapphire Substrate With Sputtered AlN Nucleation Layer
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سال
: 2014شناسه الکترونیک: 10.1109/TED.2014.2325411
کلیدواژه(گان): III-V semiconductors,aluminium compounds,crystal structure,gallium compounds,light emitting diodes,nucleation,sapphire,semiconductor epitaxial layers,sputter deposition,Al<,sub>,2<,/sub>,O<,sub>,3<,/sub>,AlN,Efficiency,GaN-Al<,sub>,2<,/sub>,O<,sub>,3<,/sub>,HARPSS,LED,MOCVD,PVD,crystal quality,crystal structure,current 20 mA,high-aspect ratio patterned sapphire substrate,light emitting diodes,metal organic chemical vapor deposition,pure wu
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Spatial Correlation Between Efficiency and Crystal Structure in GaN-Based Light-Emitting Diodes Prepared on High-Aspect Ratio Patterned Sapphire Substrate With Sputtered AlN Nucleation Layer
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| contributor author | Li-Chuan Chang | |
| contributor author | Yu-An Chen | |
| contributor author | Cheng-Huang Kuo | |
| date accessioned | 2020-03-13T00:08:30Z | |
| date available | 2020-03-13T00:08:30Z | |
| date issued | 2014 | |
| identifier issn | 0018-9383 | |
| identifier other | 6832572.pdf | |
| identifier uri | https://libsearch.um.ac.ir:443/fum/handle/fum/1135871 | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | Spatial Correlation Between Efficiency and Crystal Structure in GaN-Based Light-Emitting Diodes Prepared on High-Aspect Ratio Patterned Sapphire Substrate With Sputtered AlN Nucleation Layer | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8317438 | |
| subject keywords | III-V semiconductors | |
| subject keywords | aluminium compounds | |
| subject keywords | crystal structure | |
| subject keywords | gallium compounds | |
| subject keywords | light emitting diodes | |
| subject keywords | nucleation | |
| subject keywords | sapphire | |
| subject keywords | semiconductor epitaxial layers | |
| subject keywords | sputter deposition | |
| subject keywords | Al< | |
| subject keywords | sub> | |
| subject keywords | 2< | |
| subject keywords | /sub> | |
| subject keywords | O< | |
| subject keywords | sub> | |
| subject keywords | 3< | |
| subject keywords | /sub> | |
| subject keywords | AlN | |
| subject keywords | Efficiency | |
| subject keywords | GaN-Al< | |
| subject keywords | sub> | |
| subject keywords | 2< | |
| subject keywords | /sub> | |
| subject keywords | O< | |
| subject keywords | sub> | |
| subject keywords | 3< | |
| subject keywords | /sub> | |
| subject keywords | HARPSS | |
| subject keywords | LED | |
| subject keywords | MOCVD | |
| subject keywords | PVD | |
| subject keywords | crystal quality | |
| subject keywords | crystal structure | |
| subject keywords | current 20 mA | |
| subject keywords | high-aspect ratio patterned sapphire substrate | |
| subject keywords | light emitting diodes | |
| subject keywords | metal organic chemical vapor deposition | |
| subject keywords | pure wu | |
| identifier doi | 10.1109/TED.2014.2325411 | |
| journal title | Electron Devices, IEEE Transactions on | |
| journal volume | 61 | |
| journal issue | 7 | |
| filesize | 1994329 | |
| citations | 0 |