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Border Traps in InGaAs nMOSFETs Assessed by Low-Frequency Noise

contributor authorScarpino, Mercedes
contributor authorGupta, Swastik
contributor authorLin, Dongyang
contributor authorAlian, A.
contributor authorCrupi, Felice
contributor authorCollaert, Nadine
contributor authorThean, A.
contributor authorSimoen, Eddy
date accessioned2020-03-13T00:04:56Z
date available2020-03-13T00:04:56Z
date issued2014
identifier issn0741-3106
identifier other6819797.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1133724?locale-attribute=fa&show=full
formatgeneral
languageEnglish
publisherIEEE
titleBorder Traps in InGaAs nMOSFETs Assessed by Low-Frequency Noise
typeJournal Paper
contenttypeMetadata Only
identifier padid8314923
subject keywords1/f noise
subject keywordsIII-V semiconductors
subject keywordsMOSFET
subject keywordsalumina
subject keywordsgallium arsenide
subject keywordsindium compounds
subject keywordsnumber theory
subject keywordspassivation
subject keywordssemiconductor device noise
subject keywords1/f noise sources
subject keywordsAl<
subject keywordssub>
subject keywords2<
subject keywords/sub>
subject keywordsO<
subject keywordssub>
subject keywords3<
subject keywords/sub>
subject keywordsBT density
subject keywordsInGaAs
subject keywordsS-passivation treatment
subject keywordsborder trap density
subject keywordsepitaxial material
subject keywordsflat depth profile
subject keywordsgate dielectric
subject keywordsgeneration-recombination noise sources
subject keywordsinput-referred voltage noise PSD
subject keywordslow-frequency noise
subject keywordsn-channel MOSFETs
subject keywordsnormalized noise power spectral density
subject keywordsnumber f
identifier doi10.1109/LED.2014.2322388
journal titleElectron Device Letters, IEEE
journal volume35
journal issue7
filesize587019
citations0


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