Border Traps in InGaAs nMOSFETs Assessed by Low-Frequency Noise
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: 2014شناسه الکترونیک: 10.1109/LED.2014.2322388
کلیدواژه(گان): 1/f noise,III-V semiconductors,MOSFET,alumina,gallium arsenide,indium compounds,number theory,passivation,semiconductor device noise,1/f noise sources,Al<,sub>,2<,/sub>,O<,sub>,3<,/sub>,BT density,InGaAs,S-passivation treatment,border trap density,epitaxial material,flat depth profile,gate dielectric,generation-recombination noise sources,input-referred voltage noise PSD,low-frequency noise,n-channel MOSFETs,normalized noise power spectral density,number f
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Border Traps in InGaAs nMOSFETs Assessed by Low-Frequency Noise
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| contributor author | Scarpino, Mercedes | |
| contributor author | Gupta, Swastik | |
| contributor author | Lin, Dongyang | |
| contributor author | Alian, A. | |
| contributor author | Crupi, Felice | |
| contributor author | Collaert, Nadine | |
| contributor author | Thean, A. | |
| contributor author | Simoen, Eddy | |
| date accessioned | 2020-03-13T00:04:56Z | |
| date available | 2020-03-13T00:04:56Z | |
| date issued | 2014 | |
| identifier issn | 0741-3106 | |
| identifier other | 6819797.pdf | |
| identifier uri | https://libsearch.um.ac.ir:443/fum/handle/fum/1133724 | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | Border Traps in InGaAs nMOSFETs Assessed by Low-Frequency Noise | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8314923 | |
| subject keywords | 1/f noise | |
| subject keywords | III-V semiconductors | |
| subject keywords | MOSFET | |
| subject keywords | alumina | |
| subject keywords | gallium arsenide | |
| subject keywords | indium compounds | |
| subject keywords | number theory | |
| subject keywords | passivation | |
| subject keywords | semiconductor device noise | |
| subject keywords | 1/f noise sources | |
| subject keywords | Al< | |
| subject keywords | sub> | |
| subject keywords | 2< | |
| subject keywords | /sub> | |
| subject keywords | O< | |
| subject keywords | sub> | |
| subject keywords | 3< | |
| subject keywords | /sub> | |
| subject keywords | BT density | |
| subject keywords | InGaAs | |
| subject keywords | S-passivation treatment | |
| subject keywords | border trap density | |
| subject keywords | epitaxial material | |
| subject keywords | flat depth profile | |
| subject keywords | gate dielectric | |
| subject keywords | generation-recombination noise sources | |
| subject keywords | input-referred voltage noise PSD | |
| subject keywords | low-frequency noise | |
| subject keywords | n-channel MOSFETs | |
| subject keywords | normalized noise power spectral density | |
| subject keywords | number f | |
| identifier doi | 10.1109/LED.2014.2322388 | |
| journal title | Electron Device Letters, IEEE | |
| journal volume | 35 | |
| journal issue | 7 | |
| filesize | 587019 | |
| citations | 0 |