On the Origin of Anomalous Off–Current Under Hot Carrier Stress in p-Channel DDDMOS Transistors With STI Structure
نویسنده:
, , , , , , , , , , ,ناشر:
سال
: 2014شناسه الکترونیک: 10.1109/LED.2014.2316316
کلیدواژه(گان): MOSFET,electric fields,electron traps,hot carriers,HCS,HVNW,ISE-TCAD simulation,OFF-current conductive path,STI structure,anomalous off-current,charge pumping measurements,double diffused drain metal-oxide-semiconductor transistors,drain-side corners,electric field,electron trapping,high-voltage n-well,hot carrier stress,liner oxide layer interface,nitride layer interface,operation conditions,p-channel DDDMOS transistors,shallow trench isolation structure,Charge carrier pro
کالکشن
:
-
آمار بازدید
On the Origin of Anomalous Off–Current Under Hot Carrier Stress in p-Channel DDDMOS Transistors With STI Structure
Show full item record
| contributor author | Ching-En Chen | |
| contributor author | Ting-Chang Chang | |
| contributor author | Hua-Mao Chen | |
| contributor author | Bo You | |
| contributor author | Kai-Hsiang Yang | |
| contributor author | Szu-Han Ho | |
| contributor author | Jyun-Yu Tsai | |
| contributor author | Kuan-Ju Liu | |
| contributor author | Ying-Hsin Lu | |
| contributor author | Yu-Ju Hung | |
| contributor author | Ya-Hsiang Tai | |
| contributor author | Tseung-Yuen Tseng | |
| date accessioned | 2020-03-13T00:00:10Z | |
| date available | 2020-03-13T00:00:10Z | |
| date issued | 2014 | |
| identifier issn | 0741-3106 | |
| identifier other | 6805192.pdf | |
| identifier uri | https://libsearch.um.ac.ir:443/fum/handle/fum/1130954 | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | On the Origin of Anomalous Off–Current Under Hot Carrier Stress in p-Channel DDDMOS Transistors With STI Structure | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8311613 | |
| subject keywords | MOSFET | |
| subject keywords | electric fields | |
| subject keywords | electron traps | |
| subject keywords | hot carriers | |
| subject keywords | HCS | |
| subject keywords | HVNW | |
| subject keywords | ISE-TCAD simulation | |
| subject keywords | OFF-current conductive path | |
| subject keywords | STI structure | |
| subject keywords | anomalous off-current | |
| subject keywords | charge pumping measurements | |
| subject keywords | double diffused drain metal-oxide-semiconductor transistors | |
| subject keywords | drain-side corners | |
| subject keywords | electric field | |
| subject keywords | electron trapping | |
| subject keywords | high-voltage n-well | |
| subject keywords | hot carrier stress | |
| subject keywords | liner oxide layer interface | |
| subject keywords | nitride layer interface | |
| subject keywords | operation conditions | |
| subject keywords | p-channel DDDMOS transistors | |
| subject keywords | shallow trench isolation structure | |
| subject keywords | Charge carrier pro | |
| identifier doi | 10.1109/LED.2014.2316316 | |
| journal title | Electron Device Letters, IEEE | |
| journal volume | 35 | |
| journal issue | 6 | |
| filesize | 1277427 | |
| citations | 0 |