Effect of UV-Ozone Treatment on the Performance of ZnO TFTs Fabricated by RF Sputtering Deposition Technique
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Year
: 2014DOI: 10.1109/TED.2014.2309636
Keyword(s): elemental semiconductors,ozonation (materials processing),silicon compounds,sputter deposition,thin film transistors,zinc compounds,Hall measurement results,RF sputtering deposition technique,Si substrates,SiO2 dielectric layer,SiO<,sub>,2<,/sub>,TFT,UV-ozone treatment,ZnO,ZnO channels,ZnO films,adhesion properties,bottom-gate thin-film transistors,crystallization,gallium zinc oxide source-drain electrodes,large-area flat-panel displays,oxygen vacancies,radiofreque
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Effect of UV-Ozone Treatment on the Performance of ZnO TFTs Fabricated by RF Sputtering Deposition Technique
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| contributor author | Jia-Ling Wu | |
| contributor author | Han-Yu Lin | |
| contributor author | Po-Hung Kuo | |
| contributor author | Bo-Yuan Su | |
| contributor author | Sheng-Yuan Chu | |
| contributor author | Yu-Cheng Chen | |
| contributor author | Su-Yin Liu | |
| contributor author | Chia-Chiang Chang | |
| contributor author | Chin-Jyi Wu | |
| date accessioned | 2020-03-12T23:59:21Z | |
| date available | 2020-03-12T23:59:21Z | |
| date issued | 2014 | |
| identifier issn | 0018-9383 | |
| identifier other | 6802463.pdf | |
| identifier uri | https://libsearch.um.ac.ir:443/fum/handle/fum/1130486?locale-attribute=en | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | Effect of UV-Ozone Treatment on the Performance of ZnO TFTs Fabricated by RF Sputtering Deposition Technique | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8311017 | |
| subject keywords | elemental semiconductors | |
| subject keywords | ozonation (materials processing) | |
| subject keywords | silicon compounds | |
| subject keywords | sputter deposition | |
| subject keywords | thin film transistors | |
| subject keywords | zinc compounds | |
| subject keywords | Hall measurement results | |
| subject keywords | RF sputtering deposition technique | |
| subject keywords | Si substrates | |
| subject keywords | SiO2 dielectric layer | |
| subject keywords | SiO< | |
| subject keywords | sub> | |
| subject keywords | 2< | |
| subject keywords | /sub> | |
| subject keywords | TFT | |
| subject keywords | UV-ozone treatment | |
| subject keywords | ZnO | |
| subject keywords | ZnO channels | |
| subject keywords | ZnO films | |
| subject keywords | adhesion properties | |
| subject keywords | bottom-gate thin-film transistors | |
| subject keywords | crystallization | |
| subject keywords | gallium zinc oxide source-drain electrodes | |
| subject keywords | large-area flat-panel displays | |
| subject keywords | oxygen vacancies | |
| subject keywords | radiofreque | |
| identifier doi | 10.1109/TED.2014.2309636 | |
| journal title | Electron Devices, IEEE Transactions on | |
| journal volume | 61 | |
| journal issue | 5 | |
| filesize | 3852696 | |
| citations | 0 |