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contributor authorYi-Jian Shi
contributor authorJin Lan
contributor authorWen-Quan Sui
contributor authorXuean Zhao
date accessioned2020-03-12T23:54:18Z
date available2020-03-12T23:54:18Z
date issued2014
identifier issn0018-9464
identifier other6777540.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1127517?locale-attribute=fa&show=full
formatgeneral
languageEnglish
publisherIEEE
titleCapacitive Effects of Gate on Spin-Dependent AC Transport
typeJournal Paper
contenttypeMetadata Only
identifier padid8307484
subject keywordselectric admittance
subject keywordselectronic density of states
subject keywordsexchange interactions (electron)
subject keywordsfield effect transistors
subject keywordsmagnetoelectronics
subject keywordsspin polarised transport
subject keywordsspin-spin interactions
subject keywordsCoulomb interactions
subject keywordscharge capacitive effects
subject keywordscharge-charge interaction
subject keywordsconductance
subject keywordselectron density of states
subject keywordsexchange interactions
subject keywordsgate-controlled spin-dependent transport systems
subject keywordsinternal potentials
subject keywordsspin capacitive effects
subject keywordsspin-dependent AC transport
subject keywordsspin-spin interaction
subject keywordsspintronics devices
subject keywordsAdmittance
identifier doi10.1109/TMAG.2014.2313319
journal titleMagnetics, IEEE Transactions on
journal volume50
journal issue9
filesize692469
citations0


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