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Multi-Drive Stacked-FET Power Amplifiers at 90 GHz in 45 nm SOI CMOS

contributor authorAgah, A.
contributor authorJayamon, Jefy Alex
contributor authorAsbeck, P.M.
contributor authorLarson, Lawrence E.
contributor authorBuckwalter, James F.
date accessioned2020-03-12T23:52:37Z
date available2020-03-12T23:52:37Z
date issued2014
identifier issn0018-9200
identifier other6767139.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1126519?locale-attribute=fa&show=full
formatgeneral
languageEnglish
publisherIEEE
titleMulti-Drive Stacked-FET Power Amplifiers at 90 GHz in 45 nm SOI CMOS
typeJournal Paper
contenttypeMetadata Only
identifier padid8306377
subject keywordsCMOS integrated circuits
subject keywordsfield effect MIMIC
subject keywordspower amplifiers
subject keywordssilicon-on-insulator
subject keywordsSOI CMOS integrated circuit
subject keywordsfrequency 90 GHz
subject keywordsgain 12 dB
subject keywordsgate resistance
subject keywordsmultidrive stacked FET
subject keywordspower amplifier
subject keywordssize 45 nm
subject keywordsvoltage 3.4 V
subject keywordsCMOS integrated circuits
subject keywordsEducational institutions
subject keywordsField effect transistors
subject keywordsLogic gates
subject keywordsPower amplifiers
subject keywordsPower generation
subject keywordsReliability
subject keywordsCMOS SOI
subject keywordsW-band
subject keywordsmillimeter wave
subject keywordsmulti-drive
subject keywordspower added efficiency
subject keywordspower amplifier
subject keywordsstacked-FET PA
identifier doi10.1109/JSSC.2014.2308292
journal titleSolid-State Circuits, IEEE Journal of
journal volume49
journal issue5
filesize2421399
citations0


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