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High Mobility Solution-Processed Hafnium Indium Zinc Oxide TFT With an Al-Doped <inline-formula> <img src="/images/tex/21641.gif" alt="{\\rm ZrO}_{2}"> </inline-formula> Gate Dielectric

contributor authorYana Gao
contributor authorXifeng Li
contributor authorLonglong Chen
contributor authorJifeng Shi
contributor authorXiao Wei Sun
contributor authorJianhua Zhang
date accessioned2020-03-12T23:52:29Z
date available2020-03-12T23:52:29Z
date issued2014
identifier issn0741-3106
identifier other6767043.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1126442?locale-attribute=en&show=full
formatgeneral
languageEnglish
publisherIEEE
titleHigh Mobility Solution-Processed Hafnium Indium Zinc Oxide TFT With an Al-Doped <inline-formula> <img src="/images/tex/21641.gif" alt="{\\rm ZrO}_{2}"> </inline-formula> Gate Dielectric
typeJournal Paper
contenttypeMetadata Only
identifier padid8306284
subject keywordsaluminium compounds
subject keywordsflat panel displays
subject keywordshafnium compounds
subject keywordsindium compounds
subject keywordspermittivity
subject keywordsthin film transistors
subject keywordszinc compounds
subject keywordszirconium compounds
subject keywordsAl:ZrO<
subject keywordssub>
subject keywords2<
subject keywords/sub>
subject keywordsHfInZnO
subject keywordsON-OFF ratio
subject keywordsamorphous phase
subject keywordsbackplate requirements
subject keywordsflat panel displays
subject keywordsgate dielectric
subject keywordshigh mobility solution-processed TFT
subject keywordshigh saturation field-effect mobility
subject keywordsrelative dielectric constant
subject keywordsroot-mean-square roughness
subject keywordssubthreshold swing
subject keywordstemperature 400 degC
subject keywordstemperature 600 degC
subject keywordsthin-film tran
identifier doi10.1109/LED.2014.2310120
journal titleElectron Device Letters, IEEE
journal volume35
journal issue5
filesize950868
citations0


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