Fast 3-D Electrothermal Device/Circuit Simulation of Power Superjunction MOSFET Based on SDevice and HSPICE Interaction
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سال
: 2014شناسه الکترونیک: 10.1109/TED.2014.2305848
کلیدواژه(گان): SPICE,power MOSFET,technology CAD (electronics),HSPICE,SDevice,Synopsys TCAD Sentaurus environment,equivalent thermal 3-D RC network,fast 3-D electrothermal device/circuit simulation,power superjunction MOSFET,relaxation method,unclamped inductive switching test,Finite element analysis,Integrated circuit modeling,MOSFET,Relaxation methods,Semiconductor device modeling,Semiconductor process modeling,Solid modeling,3-D electrothermal simulation,HSPICE,SDevice,superjunction MOS
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آمار بازدید
Fast 3-D Electrothermal Device/Circuit Simulation of Power Superjunction MOSFET Based on SDevice and HSPICE Interaction
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| contributor author | Chvala, Ales | |
| contributor author | Donoval, Daniel | |
| contributor author | Marek, Jiri | |
| contributor author | Pribytny, Patrik | |
| contributor author | Molnar, Miklos | |
| contributor author | Mikolasek, M. | |
| date accessioned | 2020-03-12T23:50:10Z | |
| date available | 2020-03-12T23:50:10Z | |
| date issued | 2014 | |
| identifier issn | 0018-9383 | |
| identifier other | 6755550.pdf | |
| identifier uri | https://libsearch.um.ac.ir:443/fum/handle/fum/1125055?locale-attribute=fa | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | Fast 3-D Electrothermal Device/Circuit Simulation of Power Superjunction MOSFET Based on SDevice and HSPICE Interaction | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8304649 | |
| subject keywords | SPICE | |
| subject keywords | power MOSFET | |
| subject keywords | technology CAD (electronics) | |
| subject keywords | HSPICE | |
| subject keywords | SDevice | |
| subject keywords | Synopsys TCAD Sentaurus environment | |
| subject keywords | equivalent thermal 3-D RC network | |
| subject keywords | fast 3-D electrothermal device/circuit simulation | |
| subject keywords | power superjunction MOSFET | |
| subject keywords | relaxation method | |
| subject keywords | unclamped inductive switching test | |
| subject keywords | Finite element analysis | |
| subject keywords | Integrated circuit modeling | |
| subject keywords | MOSFET | |
| subject keywords | Relaxation methods | |
| subject keywords | Semiconductor device modeling | |
| subject keywords | Semiconductor process modeling | |
| subject keywords | Solid modeling | |
| subject keywords | 3-D electrothermal simulation | |
| subject keywords | HSPICE | |
| subject keywords | SDevice | |
| subject keywords | superjunction MOS | |
| identifier doi | 10.1109/TED.2014.2305848 | |
| journal title | Electron Devices, IEEE Transactions on | |
| journal volume | 61 | |
| journal issue | 4 | |
| filesize | 1625504 | |
| citations | 0 |