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Fast 3-D Electrothermal Device/Circuit Simulation of Power Superjunction MOSFET Based on SDevice and HSPICE Interaction

contributor authorChvala, Ales
contributor authorDonoval, Daniel
contributor authorMarek, Jiri
contributor authorPribytny, Patrik
contributor authorMolnar, Miklos
contributor authorMikolasek, M.
date accessioned2020-03-12T23:50:10Z
date available2020-03-12T23:50:10Z
date issued2014
identifier issn0018-9383
identifier other6755550.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1125055?locale-attribute=en&show=full
formatgeneral
languageEnglish
publisherIEEE
titleFast 3-D Electrothermal Device/Circuit Simulation of Power Superjunction MOSFET Based on SDevice and HSPICE Interaction
typeJournal Paper
contenttypeMetadata Only
identifier padid8304649
subject keywordsSPICE
subject keywordspower MOSFET
subject keywordstechnology CAD (electronics)
subject keywordsHSPICE
subject keywordsSDevice
subject keywordsSynopsys TCAD Sentaurus environment
subject keywordsequivalent thermal 3-D RC network
subject keywordsfast 3-D electrothermal device/circuit simulation
subject keywordspower superjunction MOSFET
subject keywordsrelaxation method
subject keywordsunclamped inductive switching test
subject keywordsFinite element analysis
subject keywordsIntegrated circuit modeling
subject keywordsMOSFET
subject keywordsRelaxation methods
subject keywordsSemiconductor device modeling
subject keywordsSemiconductor process modeling
subject keywordsSolid modeling
subject keywords3-D electrothermal simulation
subject keywordsHSPICE
subject keywordsSDevice
subject keywordssuperjunction MOS
identifier doi10.1109/TED.2014.2305848
journal titleElectron Devices, IEEE Transactions on
journal volume61
journal issue4
filesize1625504
citations0


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