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Switching layer engineering for memristive devices

contributor authorHao Jiang , Can Li , Qiangfei Xia
date accessioned2020-03-12T23:23:00Z
date available2020-03-12T23:23:00Z
date issued2014
identifier other6888616.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1109479?locale-attribute=en&show=full
formatgeneral
languageEnglish
publisherIEEE
titleSwitching layer engineering for memristive devices
typeConference Paper
contenttypeMetadata Only
identifier padid8278106
subject keywordsnumerical analysis
subject keywordsplasma magnetohydrodynamics
subject keywordsplasma simulation
subject keywordsplasma temperature
subject keywordsplasma transport processes
subject keywordsvacuum arcs
subject keywordsvacuum switches
subject keywords3D numerical simulation
subject keywordsanode temperature
subject keywordsanode vapor
subject keywordsarc column
subject keywordscup-shaped axial magnetic field electrode
subject keywordsdiffusion
subject keywordsdynamic characteristics
subject keywordsinter-electrode plasma
subject keywordsmagnetic field distribution
subject keywordsthree-dimensional simulation
subject keywordstime dependent actual magnetic field
subject keywordsvacuum arc
subject keywordsAnodes
subject keywordsHeating
subject keywordsMagnetic fields
subject keywordsMathematical model
subject keywordsSolid modeling
subject keywordsVac
identifier doi10.1109/DEIV.2014.6961670
journal titleellular Nanoscale Networks and their Applications (CNNA), 2014 14th International Workshop on
filesize540713
citations0


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