Modeling parasitic capacitances in Gallium Nitride (GaN) FET transistor

: 2014

یو آر آی: https://libsearch.um.ac.ir:443/fum/handle/fum/1077287

کالکشن :

contributor author	Loo-Yau, J.R.
date accessioned	2020-03-12T22:16:29Z
date available	2020-03-12T22:16:29Z
date issued	2014
identifier other	7000417.pdf
identifier uri	https://libsearch.um.ac.ir:443/fum/handle/fum/1077287?locale-attribute=fa
format	general
language	English
publisher	IEEE
title	Modeling parasitic capacitances in Gallium Nitride (GaN) FET transistor
type	Conference Paper
contenttype	Metadata Only
identifier padid	8213528
subject keywords	channel coding
subject keywords	n telecommunication security
subject keywords	n achievable secrecy rate
subject keywords	n binning structure
subject keywords	n communication security
subject keywords	n constrained encoding
subject keywords	n information-theoretic secrecy
subject keywords	n linear deterministic approach
subject keywords	n near-optimal codes
subject keywords	n randomization
subject keywords	n randomness rate
subject keywords	n wiretap channel codes
subject keywords	n Encoding
subject keywords	n Generators
subject keywords	n Optimization
subject keywords	n Random variables
subject keywords	n Receivers
subject keywords	n Security
subject keywords	n Stochastic processes
identifier doi	10.1109/ISCCSP.2014.6877824
journal title	entral America and Panama Convention (CONCAPAN XXXIV), 2014 IEEE
filesize	795888
citations	1

Show full item record