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Welcome!

Author:
Nelson, Catherine Blackadar
Publisher:
IEEE
Year
: 2014
DOI: 10.1109/IWJT.2014.6842053
URI: https://libsearch.um.ac.ir:443/fum/handle/fum/1068015
Keyword(s): MOSFET,n annealing,n carrier mobility,n gallium,n secondary ion mass spectra,n DIBL,n FinFET leakage characteristics,n Ga,n HS-P mixed halo formation,n SIMS,n SiON,n advanced MOSFET device,n annealing,n carrier mobility degradation,n co-implant,n device gain,n device wafers,n drain induced barrier lowering,n gallium halo,n ground plane-retrograde,n halo profile optimization,n high scattering p-type dopant,n implant induced damage
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contributor authorNelson, Catherine Blackadar
date accessioned2020-03-12T22:00:11Z
date available2020-03-12T22:00:11Z
date issued2014
identifier other6970246.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1068015?locale-attribute=en
formatgeneral
languageEnglish
publisherIEEE
titleWelcome!
typeConference Paper
contenttypeMetadata Only
identifier padid8202955
subject keywordsMOSFET
subject keywordsn annealing
subject keywordsn carrier mobility
subject keywordsn gallium
subject keywordsn secondary ion mass spectra
subject keywordsn DIBL
subject keywordsn FinFET leakage characteristics
subject keywordsn Ga
subject keywordsn HS-P mixed halo formation
subject keywordsn SIMS
subject keywordsn SiON
subject keywordsn advanced MOSFET device
subject keywordsn annealing
subject keywordsn carrier mobility degradation
subject keywordsn co-implant
subject keywordsn device gain
subject keywordsn device wafers
subject keywordsn drain induced barrier lowering
subject keywordsn gallium halo
subject keywordsn ground plane-retrograde
subject keywordsn halo profile optimization
subject keywordsn high scattering p-type dopant
subject keywordsn implant induced damage
identifier doi10.1109/IWJT.2014.6842053
journal titlelobal Humanitarian Technology Conference (GHTC), 2014 IEEE
filesize187578
citations0
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