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Metal routing induced burn out in GGNMOS ESD protection for low-power DRAM application

contributor authorMinchen Chang
contributor authorTseng-Fu Lu
contributor authorWei-Chih Wang
contributor authorFan-Wen Liu
contributor authorJao-Hsiu Rao
contributor authorWei-Ming Liao
contributor authorChia-Ming Yang
contributor authorJeng-Ping Lin
date accessioned2020-03-12T21:58:52Z
date available2020-03-12T21:58:52Z
date issued2014
identifier other6968853.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1067249?locale-attribute=en&show=full
formatgeneral
languageEnglish
publisherIEEE
titleMetal routing induced burn out in GGNMOS ESD protection for low-power DRAM application
typeConference Paper
contenttypeMetadata Only
identifier padid8201795
subject keywordsinductive power transmission
subject keywordsn magnetic fields
subject keywordsn commercial wireless inductive power transfer systems
subject keywordsn communication channel
subject keywordsn constant energy supply
subject keywordsn constant high coupling factor
subject keywordsn inductively coupled coils
subject keywordsn low frequency alternating magnetic field
subject keywordsn moving receivers
subject keywordsn operation radius
subject keywordsn power management
subject keywordsn power receiver
subject keywordsn power transmitter
subject keywordsn receiver coil
subject keywordsn receiver identification
subject keywordsn supercapacitor buffer
subject keywordsn transmitter coil
subject keywordsn Coils
subject keywordsn Cou
identifier doi10.1109/WPT.2014.6839625
journal titlelectrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2014 36th
filesize3102369
citations0


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