Allowable power analysis for high power density DC-DC converters using integrated magnetic components
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سال
: 2014شناسه الکترونیک: 10.1109/APEC.2014.6803502
کلیدواژه(گان): MOSFET,n driver circuits,n power convertors,n silicon compounds,n wide band gap semiconductors,n SEPIC converter,n SiC,n dynamic current sharing,n gate driver resistance,n junction temperature,n packaged silicon carbide MOSFET,n paralleled MOSFET,n paralleled applications,n static current sharing,n switching frequency,n Junctions,n Logic gates,n MOSFET,n Resistance,n Silicon carbide,n Switches,n Threshold voltage,n MOSFET,n Par
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Allowable power analysis for high power density DC-DC converters using integrated magnetic components
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| contributor author | Kimura, Shota | |
| contributor author | Aoto, Shogo | |
| contributor author | Imaoka, Jun | |
| contributor author | Yamamoto, Masayoshi | |
| date accessioned | 2020-03-12T21:42:15Z | |
| date available | 2020-03-12T21:42:15Z | |
| date issued | 2014 | |
| identifier other | 6954117.pdf | |
| identifier uri | https://libsearch.um.ac.ir:443/fum/handle/fum/1057497 | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | Allowable power analysis for high power density DC-DC converters using integrated magnetic components | |
| type | Conference Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8188716 | |
| subject keywords | MOSFET | |
| subject keywords | n driver circuits | |
| subject keywords | n power convertors | |
| subject keywords | n silicon compounds | |
| subject keywords | n wide band gap semiconductors | |
| subject keywords | n SEPIC converter | |
| subject keywords | n SiC | |
| subject keywords | n dynamic current sharing | |
| subject keywords | n gate driver resistance | |
| subject keywords | n junction temperature | |
| subject keywords | n packaged silicon carbide MOSFET | |
| subject keywords | n paralleled MOSFET | |
| subject keywords | n paralleled applications | |
| subject keywords | n static current sharing | |
| subject keywords | n switching frequency | |
| subject keywords | n Junctions | |
| subject keywords | n Logic gates | |
| subject keywords | n MOSFET | |
| subject keywords | n Resistance | |
| subject keywords | n Silicon carbide | |
| subject keywords | n Switches | |
| subject keywords | n Threshold voltage | |
| subject keywords | n MOSFET | |
| subject keywords | n Par | |
| identifier doi | 10.1109/APEC.2014.6803502 | |
| journal title | nergy Conversion Congress and Exposition (ECCE), 2014 IEEE | |
| filesize | 931993 | |
| citations | 0 |