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S3-P4: Impact of drain conductance in InGaaS-HEMTs operated in a class-F amplifier

contributor authorYoshida, Tomohiro
contributor authorOtsuji, Taiichi
contributor authorSuemitsu, Tetsuya
contributor authorOyama, Masashi
contributor authorWatanabe, Kunihiko
contributor authorUmeda, Yohtaro
date accessioned2020-03-12T21:38:24Z
date available2020-03-12T21:38:24Z
date issued2014
identifier other6951560.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1055356?locale-attribute=en&show=full
formatgeneral
languageEnglish
publisherIEEE
titleS3-P4: Impact of drain conductance in InGaaS-HEMTs operated in a class-F amplifier
typeConference Paper
contenttypeMetadata Only
identifier padid8186225
subject keywordsbiology computing
subject keywordsn data analysis
subject keywordsn meta data
subject keywordsn optical microscopy
subject keywordsn research and development
subject keywordsn Apache Lucene
subject keywordsn Apache Solr
subject keywordsn LSDMA project
subject keywordsn NeXus-ICAT
subject keywordsn OAI-PMH
subject keywordsn OME
subject keywordsn advanced processing capability
subject keywordsn analysis capability
subject keywordsn biology
subject keywordsn data analysis requirements
subject keywordsn data life cycles
subject keywordsn data rates
subject keywordsn data set organization
subject keywordsn data volume
subject keywordsn device-driven metadata management solutions
subject keywordsn handling capability
subject keywordsn innovative R&
subject keywordsamp
subject keywordsD
subject keywordsn light
identifier doi10.1109/PDP.2014.119
journal titleester Eastman Conference on High Performance Devices (LEC), 2014
filesize1639579
citations0


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