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Overview of Hodoyoshi microsatellites for remote sensing and its future prospect

contributor authorMaeda, K.
contributor authorNakasuka, S.
date accessioned2020-03-12T21:33:40Z
date available2020-03-12T21:33:40Z
date issued2014
identifier other6947269.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1052851?locale-attribute=fa&show=full
formatgeneral
languageEnglish
publisherIEEE
titleOverview of Hodoyoshi microsatellites for remote sensing and its future prospect
typeConference Paper
contenttypeMetadata Only
identifier padid8183098
subject keywordsMOSFET
subject keywordsn semiconductor device models
subject keywordsn semiconductor doping
subject keywordsn DDC MOS transistor
subject keywordsn TCAD simulation
subject keywordsn bulk MOS transistor
subject keywordsn deeply depleted channel MOSFET
subject keywordsn doped transistor
subject keywordsn threshold voltage modeling
subject keywordsn Analytical models
subject keywordsn MOSFET
subject keywordsn Mathematical model
subject keywordsn Predictive models
subject keywordsn Simulation
subject keywordsn Threshold voltage
subject keywordsn DDC
subject keywordsn Depletion depth
subject keywordsn Doping
subject keywordsn Intrinsic gain
subject keywordsn Surface potential
subject keywordsn T<
subject keywordsinf>
subject keywordsV<
subject keywords/inf>
subject keywordsvariation
identifier doi10.1109/ICECI.2014.6767383
journal titleeoscience and Remote Sensing Symposium (IGARSS), 2014 IEEE International
filesize260330
citations0


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