Show simple item record

Investigation of switching mechanism in forming-free multi-level resistive memories with atomic layer deposited HfTiO<inf>x</inf> nanolaminate

contributor authorChakrabarti, B. , Miranda, E. , Vogel, E.M.
date accessioned2020-03-12T20:28:22Z
date available2020-03-12T20:28:22Z
date issued2014
identifier other6872330.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1015829?locale-attribute=fa&show=full
formatgeneral
languageEnglish
publisherIEEE
titleInvestigation of switching mechanism in forming-free multi-level resistive memories with atomic layer deposited HfTiO<inf>x</inf> nanolaminate
typeConference Paper
contenttypeMetadata Only
identifier padid8139553
subject keywordsCMOS integrated circuits
subject keywordscode convertors
subject keywordsintegrated circuit design
subject keywordslow-power electronics
subject keywordsthermometers
subject keywordsCADENCE analog environment
subject keywordsMTCMOS design
subject keywordsSOI technology
subject keywordsaverage power consumption reduction
subject keywordsdynamic IR drop voltage reduction
subject keywordshigh-threshold voltage transistor
subject keywordsinrush current reduction
subject keywordsleakage current
subject keywordslow-power consumption
subject keywordslow-power high-performance MTCMOS design
subject keywordslow-threshold voltage transistor
subject keywordspower switches
subject keywordspropagation delay reduction
subject keywordsstandby leakage power
subject keywordssupply voltage
subject keywordss
identifier doi10.1109/ICCSP.2014.6950154
journal titleevice Research Conference (DRC), 2014 72nd Annual
filesize310363
citations0


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following Collection(s)

Show simple item record