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Effects of the defect creation on the bidirectional shift of threshold voltage with hump characteristics of InGaZnO TFTs under bias and thermal stress

date accessioned2020-03-12T20:23:13Z
date available2020-03-12T20:23:13Z
date issued2014
identifier other6867155.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1012627?locale-attribute=en&show=full
formatgeneral
languageEnglish
publisherIEEE
titleEffects of the defect creation on the bidirectional shift of threshold voltage with hump characteristics of InGaZnO TFTs under bias and thermal stress
typeConference Paper
contenttypeMetadata Only
identifier padid8135487
subject keywordsUHF antennas
subject keywordsconveyors
subject keywordsfeature extraction
subject keywordsradiofrequency identification
subject keywordssignal classification
subject keywordsUHF antennas
subject keywordsUHF-RFID gate
subject keywordsconveyor belt
subject keywordsfeature extraction
subject keywordsphase-based radiolocalization
subject keywordsradiofrequency identification
subject keywordsreader antenna
subject keywordsAntennas
subject keywordsBelts
subject keywordsClassification algorithms
subject keywordsHistory
subject keywordsLogic gates
subject keywordsPhase measurement
subject keywordsRadiofrequency identification
subject keywordsUHF RFID systems
subject keywordsmoving tag
subject keywordsphase-based radiolocalization
subject keywordsstatic tag
identifier doi10.1109/RFID-TA.2014.6934219
journal titlective-Matrix Flatpanel Displays and Devices (AM-FPD), 2014 21st International Workshop on
filesize1388704
citations0
contributor rawauthorHwarim Im , Hyunsoo Song , Jaewook Jeong , Yewon Hong , Yongtaek Hong


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