Output feedback tracking control for spacecraft relative translation subject to input constraints and partial loss of control effectiveness
ناشر:
سال
: 2014شناسه الکترونیک: 10.1109/ESSDERC.2014.6948772
کلیدواژه(گان): III-V semiconductors,field effect transistors,indium compounds,nanowires,silicon,tight-binding calculations,tunnel transistors,InAs-Si,InAs-Si heterojunction nanowire tunnel FET,TCAD tool,WKB approximation,atomistic quantum transport,bulk-like nanowire TFET,drift-diffusion,extreme confinement,extremely narrow TFET,p-type InAs-Si nanowire TFET,tight-binding model,ultra-scaled InAs-Si nanowire TFET,Approximation methods,Dispersion,Logic gates,Semiconductor device modeling,Si
کالکشن
:
-
آمار بازدید
Output feedback tracking control for spacecraft relative translation subject to input constraints and partial loss of control effectiveness
Show full item record
contributor author | Lin Zhao , Yingmin Jia , Junping Du , Jun Zhang | |
date accessioned | 2020-03-12T20:13:42Z | |
date available | 2020-03-12T20:13:42Z | |
date issued | 2014 | |
identifier other | 6858670.pdf | |
identifier uri | https://libsearch.um.ac.ir:443/fum/handle/fum/1006671 | |
format | general | |
language | English | |
publisher | IEEE | |
title | Output feedback tracking control for spacecraft relative translation subject to input constraints and partial loss of control effectiveness | |
type | Conference Paper | |
contenttype | Metadata Only | |
identifier padid | 8128231 | |
subject keywords | III-V semiconductors | |
subject keywords | field effect transistors | |
subject keywords | indium compounds | |
subject keywords | nanowires | |
subject keywords | silicon | |
subject keywords | tight-binding calculations | |
subject keywords | tunnel transistors | |
subject keywords | InAs-Si | |
subject keywords | InAs-Si heterojunction nanowire tunnel FET | |
subject keywords | TCAD tool | |
subject keywords | WKB approximation | |
subject keywords | atomistic quantum transport | |
subject keywords | bulk-like nanowire TFET | |
subject keywords | drift-diffusion | |
subject keywords | extreme confinement | |
subject keywords | extremely narrow TFET | |
subject keywords | p-type InAs-Si nanowire TFET | |
subject keywords | tight-binding model | |
subject keywords | ultra-scaled InAs-Si nanowire TFET | |
subject keywords | Approximation methods | |
subject keywords | Dispersion | |
subject keywords | Logic gates | |
subject keywords | Semiconductor device modeling | |
subject keywords | Si | |
identifier doi | 10.1109/ESSDERC.2014.6948772 | |
journal title | merican Control Conference (ACC), 2014 | |
filesize | 385712 | |
citations | 0 |