Impacts of conduction band offset and border traps on V<inf>th</inf> instability of gate recessed normally-off GaN MIS-HEMTs
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سال
: 2014شناسه الکترونیک: 10.1109/CEIDP.2014.6995781
کلیدواژه(گان): Discharges (electric),Electrodes,Electron tubes,Geometry,Partial discharges,Sulfur hexafluoride,Voltage measurement
کالکشن
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آمار بازدید
Impacts of conduction band offset and border traps on V<inf>th</inf> instability of gate recessed normally-off GaN MIS-HEMTs
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| date accessioned | 2020-03-12T20:11:09Z | |
| date available | 2020-03-12T20:11:09Z | |
| date issued | 2014 | |
| identifier other | 6856053.pdf | |
| identifier uri | https://libsearch.um.ac.ir:443/fum/handle/fum/1005085 | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | Impacts of conduction band offset and border traps on V<inf>th</inf> instability of gate recessed normally-off GaN MIS-HEMTs | |
| type | Conference Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8126504 | |
| subject keywords | Discharges (electric) | |
| subject keywords | Electrodes | |
| subject keywords | Electron tubes | |
| subject keywords | Geometry | |
| subject keywords | Partial discharges | |
| subject keywords | Sulfur hexafluoride | |
| subject keywords | Voltage measurement | |
| identifier doi | 10.1109/CEIDP.2014.6995781 | |
| journal title | ower Semiconductor Devices & IC's (ISPSD), 2014 IEEE 26th International Symposium o | |
| filesize | 1337548 | |
| citations | 0 | |
| contributor rawauthor | Woojin Choi , Hojin Ryu , Namcheol Jeon , Minseong Lee , Neung-Hee Lee , Kwang-Seok Seo , Ho-Young Cha |