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Zero voltage switching characterization of 12 kV SiC N-IGBTs

date accessioned2020-03-12T20:11:08Z
date available2020-03-12T20:11:08Z
date issued2014
identifier other6856048.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1005080?locale-attribute=fa&show=full
formatgeneral
languageEnglish
publisherIEEE
titleZero voltage switching characterization of 12 kV SiC N-IGBTs
typeConference Paper
contenttypeMetadata Only
identifier padid8126499
subject keywordsFatigue
subject keywordsJoints
subject keywordsLoad modeling
subject keywordsLoading
subject keywordsStress
subject keywordsThermal loading
subject keywordsVibrations
subject keywordsLife Prediction
subject keywordsPhysics of Failure
subject keywordsResidual Strength Reliability
subject keywordsThermal Fatigue
subject keywordsVibration Fatigue
identifier doi10.1109/PHM.2014.6988123
journal titleower Semiconductor Devices & IC's (ISPSD), 2014 IEEE 26th International Symposium o
filesize681047
citations0
contributor rawauthorKadavelugu, A. , Bhattcharya, S. , Baliga, B.J. , Sei-Hyung Ryu , Grider, D. , Palmour, J.


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