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نویسنده : Moonju Cho; Arimura, H.; Jae Woo Lee; Kaczer, Ben; Veloso, A.; Boccardi, Guillaume; Ragnarsson, Lars-Ake; Kauerauf, T.; Horiguchi, Naoto; Groeseneken, Guido

ناشر: IEEE

سال: 2014

Circuit and process co-design with vertical gate-all-around nanowire FET technology to extend CMOS scaling for 5nm and beyond technologies

نوع: Conference Paper

نویسنده : Bao, T.H.; Yakimets, D.; Ryckaert, J.; Ciofi, I.; Baert, R.; Veloso, A.; Boemmels, J.; Collaert, N.; Roussel, P.; Demuynck, S.; Raghavan, P.; Mercha, A.; Tokei, Z.; Verkest, D.; Thean, A.V.-Y.; Wambacq, P.

ناشر: IEEE

سال: 2014

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[IEEE 2009 IEEE International SOI Conference - Foster City, CA, USA (2009.10.5-2009.10.8)] 2009 IEEE International SOI Conference - Review of FINFET technology

Socialbots: Implications on the Safety and Reliability of Twitter-Based Services

Parallel and distributed methods for incremental frequent itemset mining

Spike Anneal Peak Temperature Impact on 1T-DRAM Retention Time

Improved Channel Hot-Carrier Reliability in <formula formulatype="inline"> <img src="/images/tex/387.gif" alt="p"> </formula>-FinFETs With Replacement Metal Gate by a Nitrogen Postdeposition Anneal Process

Circuit and process co-design with vertical gate-all-around nanowire FET technology to extend CMOS scaling for 5nm and beyond technologies

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[IEEE 2009 IEEE International SOI Conference - Foster City, CA, USA (2009.10.5-2009.10.8)] 2009 IEEE International SOI Conference - Review of FINFET technology

Socialbots: Implications on the Safety and Reliability of Twitter-Based Services

Parallel and distributed methods for incremental frequent itemset mining

Spike Anneal Peak Temperature Impact on 1T-DRAM Retention Time

Improved Channel Hot-Carrier Reliability in <formula formulatype="inline"> <img src="/images/tex/387.gif" alt="p"> </formula>-FinFETs With Replacement Metal Gate by a Nitrogen Postdeposition Anneal Process

Circuit and process co-design with vertical gate-all-around nanowire FET technology to extend CMOS scaling for 5nm and beyond technologies