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The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devices

نوع: Conference Paper

نویسنده : Morgan, K.A.; Ruomeng Huang; Pearce, S.; De Groot, C.H.

ناشر: IEEE

سال: 2014

Total Dose Hardness of <formula formulatype="inline"> <img src="/images/tex/21599.gif" alt="{\\rm TiN}/{\\rm HfO}_{\\rm x}/{\\rm TiN}"> </formula> Resistive Random Access Memory

نوع: Journal Paper

نویسنده : Morgan, Katrina /A/.; Ruomeng Huang; Potter, Kristin; Shaw, Chris; Redman-White, William; De Groot, C.H.

ناشر: IEEE

سال: 2014

Low Pressure Chemical Vapour Deposition of Crystalline Ga2Te3 and Ga2Se3 Thin Films from Single Source Precursors Using Telluroether and Selenoether Complexes

نوع: Journal Paper

نویسنده : Kathryn George; C. H. (Kees) de Groot; Chitra Gurnani; Andrew L. Hector; Ruomeng Huang; Marek Jura; William Levason; Gillian Reid

سال: 2013

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Controlling the nanostructure of bismuth telluride by selective chemical vapour deposition from a single source precursor

نوع: Journal Paper

نویسنده : Sophie L. Benjamin; C. H. (Kees) de Groot; Chitra Gurnani; Andrew L. Hector; Ruomeng Huang; Elena Koukharenko; William Levason; Gillian Reid

سال: 2014

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The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devices

Total Dose Hardness of <formula formulatype="inline"> <img src="/images/tex/21599.gif" alt="{\\rm TiN}/{\\rm HfO}_{\\rm x}/{\\rm TiN}"> </formula> Resistive Random Access Memory

Low Pressure Chemical Vapour Deposition of Crystalline Ga2Te3 and Ga2Se3 Thin Films from Single Source Precursors Using Telluroether and Selenoether Complexes

Controlling the nanostructure of bismuth telluride by selective chemical vapour deposition from a single source precursor

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The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devices

Total Dose Hardness of <formula formulatype="inline"> <img src="/images/tex/21599.gif" alt="{\\rm TiN}/{\\rm HfO}_{\\rm x}/{\\rm TiN}"> </formula> Resistive Random Access Memory

Low Pressure Chemical Vapour Deposition of Crystalline Ga2Te3 and Ga2Se3 Thin Films from Single Source Precursors Using Telluroether and Selenoether Complexes

Controlling the nanostructure of bismuth telluride by selective chemical vapour deposition from a single source precursor