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[IEEE 2011 IEEE 11th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF 2011) - Phoenix, AZ (2011.01.17-2011.01.19)] 2011 IEEE 11th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Design and fabrication considerations in developing high-Q MEMS capacitors and inductors

نوع: Journal Paper

نویسنده : Rais-Zadeh, Mina

سال: 2011

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Non-Linearity Analysis of RF Ohmic Switches Based on Phase Change Materials

نوع: Journal Paper

نویسنده : Yonghyun Shim; Rais-Zadeh, Mina

ناشر: IEEE

سال: 2014

A Thickness-Mode AlGaN/GaN Resonant Body High Electron Mobility Transistor

نوع: Journal Paper

نویسنده : Ansari, A.; Rais-Zadeh, Mina

ناشر: IEEE

سال: 2014

A Temperature-Compensated Gallium Nitride Micromechanical Resonator

نوع: Journal Paper

نویسنده : Ansari, A.; Rais-Zadeh, Mina

ناشر: IEEE

سال: 2014

Uncooled Infrared Detectors Using Gallium Nitride on Silicon Micromechanical Resonators

نوع: Journal Paper

نویسنده : Gokhale, Vikrant Jayant; Rais-Zadeh, Mina

ناشر: IEEE

سال: 2014

A Low-Loss Directly Heated Two-Port RF Phase Change Switch

نوع: Journal Paper

نویسنده : Wang, Michael; Yonghyun Shim; Rais-Zadeh, Mina

ناشر: IEEE

سال: 2014

A Multimetal Surface Micromachining Process for Tunable RF MEMS Passives

نوع: Journal Paper

نویسنده : Shim, Yonghyun; Wu, Zhengzheng; Rais-Zadeh, Mina

سال: 2012

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Infrared Absorption Properties of Carbon Nanotube/Nanodiamond Based Thin Film Coatings

نوع: Journal Paper

نویسنده : Gokhale, Vikrant Jayant; Shenderova, Olga /A/.; McGuire, G.E.; Rais-Zadeh, Mina

ناشر: IEEE

سال: 2014

Gallium Nitride as an Electromechanical Material

نوع: Journal Paper

نویسنده : Rais-Zadeh, Mina; Gokhale, Vikrant Jayant; Ansari, A.; Faucher, Marc; Thé ron, Didier; Cordier, Yvon; Buchaillot, Lionel

ناشر: IEEE

سال: 2014

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Non-Linearity Analysis of RF Ohmic Switches Based on Phase Change Materials

A Thickness-Mode AlGaN/GaN Resonant Body High Electron Mobility Transistor

A Temperature-Compensated Gallium Nitride Micromechanical Resonator

Uncooled Infrared Detectors Using Gallium Nitride on Silicon Micromechanical Resonators

A Low-Loss Directly Heated Two-Port RF Phase Change Switch

A Multimetal Surface Micromachining Process for Tunable RF MEMS Passives

Infrared Absorption Properties of Carbon Nanotube/Nanodiamond Based Thin Film Coatings

Gallium Nitride as an Electromechanical Material

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Non-Linearity Analysis of RF Ohmic Switches Based on Phase Change Materials

A Thickness-Mode AlGaN/GaN Resonant Body High Electron Mobility Transistor

A Temperature-Compensated Gallium Nitride Micromechanical Resonator

Uncooled Infrared Detectors Using Gallium Nitride on Silicon Micromechanical Resonators

A Low-Loss Directly Heated Two-Port RF Phase Change Switch

A Multimetal Surface Micromachining Process for Tunable RF MEMS Passives

Infrared Absorption Properties of Carbon Nanotube/Nanodiamond Based Thin Film Coatings

Gallium Nitride as an Electromechanical Material