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نمایش تعداد 1-3 از 3

<inline-formula> <img src="/images/tex/21676.gif" alt="{\\rm SiN}_{x}"> </inline-formula>/InAlN/AlN/GaN MIS-HEMTs With 10.8 <inline-formula> <img src="/images/tex/21677.gif" alt="{\\rm THz}\\cdot{\\rm V}"> </inline-formula> Johnson Figure of Merit

نوع: Journal Paper

نویسنده : Downey, Brian P.; Meyer, D.J.; Katzer, D. Scott; Roussos, Jason /A/.; Ming Pan; Xiang Gao

ناشر: IEEE

سال: 2014

Correlation of threading screw dislocation density to GaN 2-DEG mobility

نوع: Journal Paper

نویسنده : Hite, Jennifer K.; Gaddipati, P.; Meyer, D.J.; Mastro, Michael /A/.; Eddy, Charles R.

ناشر: IET

سال: 2014

Large-Signal RF Performance of Nanocrystalline Diamond Coated AlGaN/GaN High Electron Mobility Transistors

نوع: Journal Paper

نویسنده : Meyer, D.J.; Feygelson, Tatyana /I/.; Anderson, Travis J.; Roussos, Jason /A/.; Tadjer, Marko J.; Downey, Brian P.; Katzer, D. Scott; Pate, Bradford B.; Ancona, Mario G.; Koehler, Andrew D.; Hobart, Karl D.; Eddy, Charles R.

ناشر: IEEE

سال: 2014

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<inline-formula> <img src="/images/tex/21676.gif" alt="{\\rm SiN}_{x}"> </inline-formula>/InAlN/AlN/GaN MIS-HEMTs With 10.8 <inline-formula> <img src="/images/tex/21677.gif" alt="{\\rm THz}\\cdot{\\rm V}"> </inline-formula> Johnson Figure of Merit

Correlation of threading screw dislocation density to GaN 2-DEG mobility

Large-Signal RF Performance of Nanocrystalline Diamond Coated AlGaN/GaN High Electron Mobility Transistors

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<inline-formula> <img src="/images/tex/21676.gif" alt="{\\rm SiN}_{x}"> </inline-formula>/InAlN/AlN/GaN MIS-HEMTs With 10.8 <inline-formula> <img src="/images/tex/21677.gif" alt="{\\rm THz}\\cdot{\\rm V}"> </inline-formula> Johnson Figure of Merit

Correlation of threading screw dislocation density to GaN 2-DEG mobility

Large-Signal RF Performance of Nanocrystalline Diamond Coated AlGaN/GaN High Electron Mobility Transistors