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نمایش تعداد 1-6 از 6

Intrinsic Performance of InAs Nanowire Capacitors

نوع: Journal Paper

نویسنده : Jansson, Karl; Lind, Erik; Wernersson, Lars-Erik

ناشر: IEEE

سال: 2014

Asymmetric InGaAs/InP MOSFETs With Source/Drain Engineering

نوع: Journal Paper

نویسنده : Jiongjiong Mo; Lind, Erik; Wernersson, Lars-Erik

ناشر: IEEE

سال: 2014

<formula formulatype="inline"> <img src="/images/tex/21154.gif" alt="{\\rm In}_{0.53}{\\rm Ga}_{0.47}{\\rm As}"> </formula> Multiple-Gate Field-Effect Transistors With Selectively Regrown Channels

نوع: Journal Paper

نویسنده : Zota, Cezar B.; Wernersson, Lars-Erik; Lind, Erik

ناشر: IEEE

سال: 2014

High-Frequency Gate-All-Around Vertical InAs Nanowire MOSFETs on Si Substrates

نوع: Journal Paper

نویسنده : Johansson, Susie; Memisevic, Elvedin; Wernersson, Lars-Erik; Lind, Erik

ناشر: IEEE

سال: 2014

RF and DC Analysis of Stressed InGaAs MOSFETs

نوع: Journal Paper

نویسنده : Roll, Guntrade; Lind, Erik; Egard, Mikael; Johansson, Susie; Ohlsson, Lars; Wernersson, Lars-Erik

ناشر: IEEE

سال: 2014

InAs nanowire MOSFET differential active mixer on Si-substrate

نوع: Journal Paper

نویسنده : Persson, Karl-Magnus; Berg, Markus; Sjö land, Henrik; Lind, Erik; Wernersson, Lars-Erik

ناشر: IET

سال: 2014

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Intrinsic Performance of InAs Nanowire Capacitors

Asymmetric InGaAs/InP MOSFETs With Source/Drain Engineering

<formula formulatype="inline"> <img src="/images/tex/21154.gif" alt="{\\rm In}_{0.53}{\\rm Ga}_{0.47}{\\rm As}"> </formula> Multiple-Gate Field-Effect Transistors With Selectively Regrown Channels

High-Frequency Gate-All-Around Vertical InAs Nanowire MOSFETs on Si Substrates

RF and DC Analysis of Stressed InGaAs MOSFETs

InAs nanowire MOSFET differential active mixer on Si-substrate

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Intrinsic Performance of InAs Nanowire Capacitors

Asymmetric InGaAs/InP MOSFETs With Source/Drain Engineering

<formula formulatype="inline"> <img src="/images/tex/21154.gif" alt="{\\rm In}_{0.53}{\\rm Ga}_{0.47}{\\rm As}"> </formula> Multiple-Gate Field-Effect Transistors With Selectively Regrown Channels

High-Frequency Gate-All-Around Vertical InAs Nanowire MOSFETs on Si Substrates

RF and DC Analysis of Stressed InGaAs MOSFETs

InAs nanowire MOSFET differential active mixer on Si-substrate