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نمایش تعداد 1-10 از 16

An Analytical Model With 2-D Effects for 4H-SiC Trenched Junction Barrier Schottky Diodes

نوع: Journal Paper

نویسنده : Na Ren; Kuang Sheng

ناشر: IEEE

سال: 2014

High Temperature Stability and the Performance Degradation of SiC MOSFETs

نوع: Journal Paper

نویسنده : Weicheng Zhou; Xueqian Zhong; Kuang Sheng

ناشر: IEEE

سال: 2014

High temperature stability evaluation of SiC MOSFETs

نوع: Conference Paper

نویسنده : Weicheng Zhou , Xueqian Zhong , Kuang Sheng

ناشر: IEEE

سال: 2014

Discussion on the combination of Loop-Free Alternates and Maximally Redundant Trees for IP networks Fast Reroute

نوع: Conference Paper

نویسنده : Kaixuan Kuang , Sheng Wang , Xiong Wang

ناشر: IEEE

سال: 2014

Study of the leakage current suppression for hybrid-Schottky/ohmic drain AlGaN/GaN HEMT

نوع: Journal Paper

نویسنده : Cen Tang; Gang Xie; Kuang Sheng

سال: 2015

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Resonant power electronic transformer for power grid

نوع: Journal Paper

نویسنده : Zhaohui Wang; Jiajia Ouyang; Junming Zhang; Kuang Sheng; Wenxi Yao

سال: 2014

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A Bidirectional LLC Resonant Converter With Automatic Forward and Backward Mode Transition

نوع: Journal Paper

نویسنده : Tianyang Jiang; Junming Zhang; Xinke Wu; Kuang Sheng; Yousheng Wang

سال: 2015

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A 3600 V/80 A Series--Parallel-Connected Silicon Carbide MOSFETs Module With a Single External Gate Driver

نوع: Journal Paper

نویسنده : Xinke Wu; Shidong Cheng; Qiang Xiao; Kuang Sheng

ناشر: IEEE

سال: 2014

An All-SiC High-Frequency Boost DC–DC Converter Operating at 320 °C Junction Temperature

نوع: Journal Paper

نویسنده : Xueqian Zhong; Xinke Wu; Weicheng Zhou; Kuang Sheng

ناشر: IEEE

سال: 2014

Rheology and Thermal Conductivity of Diamond Powder-Filled Liquid Epoxy Encapsulants for Electronic Packaging

نوع: Journal Paper

نویسنده : Yongxi Zhang,; Xiangyang Hu,; Zhao, J.H.; Kuang Sheng,; Cannon, W.R.; Xiaohui Wang,; Fursin, L.

سال: 2009

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An Analytical Model With 2-D Effects for 4H-SiC Trenched Junction Barrier Schottky Diodes

High Temperature Stability and the Performance Degradation of SiC MOSFETs

High temperature stability evaluation of SiC MOSFETs

Discussion on the combination of Loop-Free Alternates and Maximally Redundant Trees for IP networks Fast Reroute

Study of the leakage current suppression for hybrid-Schottky/ohmic drain AlGaN/GaN HEMT

Resonant power electronic transformer for power grid

A Bidirectional LLC Resonant Converter With Automatic Forward and Backward Mode Transition

A 3600 V/80 A Series--Parallel-Connected Silicon Carbide MOSFETs Module With a Single External Gate Driver

An All-SiC High-Frequency Boost DC–DC Converter Operating at 320 °C Junction Temperature

Rheology and Thermal Conductivity of Diamond Powder-Filled Liquid Epoxy Encapsulants for Electronic Packaging

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An Analytical Model With 2-D Effects for 4H-SiC Trenched Junction Barrier Schottky Diodes

High Temperature Stability and the Performance Degradation of SiC MOSFETs

High temperature stability evaluation of SiC MOSFETs

Discussion on the combination of Loop-Free Alternates and Maximally Redundant Trees for IP networks Fast Reroute

Study of the leakage current suppression for hybrid-Schottky/ohmic drain AlGaN/GaN HEMT

Resonant power electronic transformer for power grid

A Bidirectional LLC Resonant Converter With Automatic Forward and Backward Mode Transition

A 3600 V/80 A Series--Parallel-Connected Silicon Carbide MOSFETs Module With a Single External Gate Driver

An All-SiC High-Frequency Boost DC&#x2013;DC Converter Operating at 320 &#x00B0;C Junction Temperature

Rheology and Thermal Conductivity of Diamond Powder-Filled Liquid Epoxy Encapsulants for Electronic Packaging

An All-SiC High-Frequency Boost DC–DC Converter Operating at 320 °C Junction Temperature