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نمایش تعداد 1-7 از 7

Impact of the channel thickness on the performance of Schottky barrier metal–oxide–semiconductor field-effect transistors

نوع: Journal Paper

نویسنده : Knoch, J.; Appenzeller, J.

سال: 2002

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Analysis of emitter performance contacted with silicide induced dopant segregation

نوع: Conference Paper

نویسنده : Lenz, M.; Knoch, J.

ناشر: IEEE

سال: 2014

Electrostatic Doping—Controlling the Properties of Carbon-Based FETs With Gates

نوع: Journal Paper

نویسنده : Knoch, J.; Muller, M.R.

ناشر: IEEE

سال: 2014

Contacting Moderately Doped Phosphorous Emitters of Silicon Solar Cells With Dopant Segregation During Nickel Silicidation

نوع: Journal Paper

نویسنده : Lenz, M.; Windgassen, Horst; Pletzer, Tobias M.; Knoch, J.

ناشر: IEEE

سال: 2014

Tackling hillocks growth after aluminum CMP

نوع: Conference Paper

نویسنده : Muller, M.R.; Kallis, K.; Menzel, S.; Kunzelmann, U.; Petrov, I.; Knoch, J.

ناشر: IEEE

سال: 2014

Quantitative local current-voltage analysis with different spatially-resolved camera based techniques of silicon solar cells with cracks

نوع: Conference Paper

نویسنده : Pletzer, T.M.; van Molken, J.I.; Rissland, S.; Hallam, B.; Cornagliotti, E.; John, J.; Breitenstein, O.; Knoch, J.

ناشر: IEEE

سال: 2014

Suppression of ambipolar behavior in metallic source/drain metal-oxide-semiconductor field-effect transistors

نوع: Journal Paper

نویسنده : Ghoneim, H.; Knoch, J.; Riel, H.; Webb, D.; BjoÌ rk, M. T.; Karg, S.; LoÌ rtscher, E.; Schmid, H.; Riess, W.

سال: 2009

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Impact of the channel thickness on the performance of Schottky barrier metal–oxide–semiconductor field-effect transistors

Analysis of emitter performance contacted with silicide induced dopant segregation

Electrostatic Doping—Controlling the Properties of Carbon-Based FETs With Gates

Contacting Moderately Doped Phosphorous Emitters of Silicon Solar Cells With Dopant Segregation During Nickel Silicidation

Tackling hillocks growth after aluminum CMP

Quantitative local current-voltage analysis with different spatially-resolved camera based techniques of silicon solar cells with cracks

Suppression of ambipolar behavior in metallic source/drain metal-oxide-semiconductor field-effect transistors

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Impact of the channel thickness on the performance of Schottky barrier metal–oxide–semiconductor field-effect transistors

Analysis of emitter performance contacted with silicide induced dopant segregation

Electrostatic Doping&#x2014;Controlling the Properties of Carbon-Based FETs With Gates

Contacting Moderately Doped Phosphorous Emitters of Silicon Solar Cells With Dopant Segregation During Nickel Silicidation

Tackling hillocks growth after aluminum CMP

Quantitative local current-voltage analysis with different spatially-resolved camera based techniques of silicon solar cells with cracks

Suppression of ambipolar behavior in metallic source/drain metal-oxide-semiconductor field-effect transistors

Electrostatic Doping—Controlling the Properties of Carbon-Based FETs With Gates