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نمایش تعداد 1-10 از 11

Use of SSTA Tools for Evaluating BTI Impact on Combinational Circuits

نوع: Journal Paper

نویسنده : Camargo, Vinicius V. /A/.; Kaczer, Ben; Wirth, Glen; Grasser, Tibor; Groeseneken, Guido

ناشر: IEEE

سال: 2014

NBTI in Nanoscale MOSFETs—The Ultimate Modeling Benchmark

نوع: Journal Paper

نویسنده : Grasser, Tibor; Rott, Karsten; Reisinger, H.; Waltl, M.; Schanovsky, Franz; Kaczer, Ben

ناشر: IEEE

سال: 2014

Defect-Centric Distribution of Channel Hot Carrier Degradation in Nano-MOSFETs

نوع: Journal Paper

نویسنده : Procel, Luis Miguel; Crupi, Felice; Franco, Jacopo; Trojman, Lionel; Kaczer, Ben

ناشر: IEEE

سال: 2014

Implications of BTI-Induced Time-Dependent Statistics on Yield Estimation of Digital Circuits

نوع: Journal Paper

نویسنده : Weckx, Pieter; Kaczer, Ben; Toledano-Luque, Maria; Raghavan, Praveen; Franco, Jacopo; Roussel, P.J.; Groeseneken, Guido; Catthoor, Francky

ناشر: IEEE

سال: 2014

Development of a Technique for Characterizing Bias Temperature Instability-Induced Device-to-Device Variation at SRAM-Relevant Conditions

نوع: Journal Paper

نویسنده : Meng Duan; Jian Fu Zhang; Zhigang Ji; Wei Dong Zhang; Kaczer, Ben; Schram, T.; Ritzenthaler, R.; Groeseneken, Guido; Asenov, Asen

ناشر: IEEE

سال: 2014

Improved Channel Hot-Carrier Reliability in <formula formulatype="inline"> <img src="/images/tex/387.gif" alt="p"> </formula>-FinFETs With Replacement Metal Gate by a Nitrogen Postdeposition Anneal Process

نوع: Journal Paper

نویسنده : Moonju Cho; Arimura, H.; Jae Woo Lee; Kaczer, Ben; Veloso, A.; Boccardi, Guillaume; Ragnarsson, Lars-Ake; Kauerauf, T.; Horiguchi, Naoto; Groeseneken, Guido

ناشر: IEEE

سال: 2014

Energy Distribution of Positive Charges in <formula formulatype="inline"> <img src="/images/tex/21372.gif" alt="{\\rm Al}_{2}{\\rm O}_{3}{\\rm GeO}_{2}/{\\rm Ge}"> </formula> pMOSFETs

نوع: Journal Paper

نویسنده : Jigang Ma; Zhang, Jian F.; Zhigang Ji; Benbakhti, Brahim; Wei Zhang; Mitard, J.; Kaczer, Ben; Groeseneken, Guido; Hall, Sebastian; Robertson, John; Chalker, Paul

ناشر: IEEE

سال: 2014

Comparison of Reaction-Diffusion and Atomistic Trap-Based BTI Models for Logic Gates

نوع: Journal Paper

نویسنده : Kukner, Halil; Khan, Sharifullah; Weckx, Pieter; Raghavan, Praveen; Hamdioui, Said; Kaczer, Ben; Catthoor, Francky; Van der Perre, Liesbet; Lauwereins, Rudy; Groeseneken, Guido

ناشر: IEEE

سال: 2014

Characterization of Negative-Bias Temperature Instability of Ge MOSFETs With <inline-formula> <img src="/images/tex/21640.gif" alt="{\\rm GeO}_{2}/{\\rm Al}_{2}{\\rm O}_{3}"> </inline-formula> Stack

نوع: Journal Paper

نویسنده : Jigang Ma; Jian Fu Zhang; Zhigang Ji; Benbakhti, Brahim; Wei Dong Zhang; Xue Feng Zheng; Mitard, J.; Kaczer, Ben; Groeseneken, Guido; Hall, Sebastian; Robertson, John; Chalker, P.R.

ناشر: IEEE

سال: 2014

Interplay Between Statistical Variability and Reliability in Contemporary pMOSFETs: Measurements Versus Simulations

نوع: Journal Paper

نویسنده : Hussin, R.; Amoroso, Salvatore Maria; Gerrer, Louis; Kaczer, Ben; Weckx, Pieter; Franco, Jacopo; Vanderheyden, A.; Vanhaeren, D.; Horiguchi, Naoto; Asenov, Asen

ناشر: IEEE

سال: 2014

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Use of SSTA Tools for Evaluating BTI Impact on Combinational Circuits

NBTI in Nanoscale MOSFETs—The Ultimate Modeling Benchmark

Defect-Centric Distribution of Channel Hot Carrier Degradation in Nano-MOSFETs

Implications of BTI-Induced Time-Dependent Statistics on Yield Estimation of Digital Circuits

Development of a Technique for Characterizing Bias Temperature Instability-Induced Device-to-Device Variation at SRAM-Relevant Conditions

Improved Channel Hot-Carrier Reliability in <formula formulatype="inline"> <img src="/images/tex/387.gif" alt="p"> </formula>-FinFETs With Replacement Metal Gate by a Nitrogen Postdeposition Anneal Process

Energy Distribution of Positive Charges in <formula formulatype="inline"> <img src="/images/tex/21372.gif" alt="{\\rm Al}_{2}{\\rm O}_{3}{\\rm GeO}_{2}/{\\rm Ge}"> </formula> pMOSFETs

Comparison of Reaction-Diffusion and Atomistic Trap-Based BTI Models for Logic Gates

Characterization of Negative-Bias Temperature Instability of Ge MOSFETs With <inline-formula> <img src="/images/tex/21640.gif" alt="{\\rm GeO}_{2}/{\\rm Al}_{2}{\\rm O}_{3}"> </inline-formula> Stack

Interplay Between Statistical Variability and Reliability in Contemporary pMOSFETs: Measurements Versus Simulations

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Use of SSTA Tools for Evaluating BTI Impact on Combinational Circuits

NBTI in Nanoscale MOSFETs&#x2014;The Ultimate Modeling Benchmark

Defect-Centric Distribution of Channel Hot Carrier Degradation in Nano-MOSFETs

Implications of BTI-Induced Time-Dependent Statistics on Yield Estimation of Digital Circuits

Development of a Technique for Characterizing Bias Temperature Instability-Induced Device-to-Device Variation at SRAM-Relevant Conditions

Improved Channel Hot-Carrier Reliability in <formula formulatype="inline"> <img src="/images/tex/387.gif" alt="p"> </formula>-FinFETs With Replacement Metal Gate by a Nitrogen Postdeposition Anneal Process

Energy Distribution of Positive Charges in <formula formulatype="inline"> <img src="/images/tex/21372.gif" alt="{\\rm Al}_{2}{\\rm O}_{3}{\\rm GeO}_{2}/{\\rm Ge}"> </formula> pMOSFETs

Comparison of Reaction-Diffusion and Atomistic Trap-Based BTI Models for Logic Gates

Characterization of Negative-Bias Temperature Instability of Ge MOSFETs With <inline-formula> <img src="/images/tex/21640.gif" alt="{\\rm GeO}_{2}/{\\rm Al}_{2}{\\rm O}_{3}"> </inline-formula> Stack

Interplay Between Statistical Variability and Reliability in Contemporary pMOSFETs: Measurements Versus Simulations

NBTI in Nanoscale MOSFETs—The Ultimate Modeling Benchmark