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نویسنده : Jingqian Liu; Jinyan Wang; Zhe Xu; Haisang Jiang; Zhenchuan Yang; Maojun Wang; Min Yu; Bing Xie; Wengang Wu; Xiaohua Ma; Jincheng Zhang; Yue Hao

ناشر: IET

سال: 2014

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Tunable schottky barrier in blue phosphorus–graphene heterojunction with normal strain

Preparation of ultra-thin and high-quality WO3 compact layers and comparision of WO3 and TiO2 compact layer thickness in planar perovskite solar cells

The Effect of 3-MeV Proton Irradiation on the Performance of InGaN/GaN MQWs Solar Cells

Influence of PbCl2 content in PbI2 solution of DMF on the absorption, crystal phase, morphology of lead halide thin films and photovoltaic performance in planar perovskite solar cells

Investigation of GaAsBi/GaAsN Type-II Staggered Heterojunction TFETs with the Analytical Model

Multiferroics for Spintronics

High-Performance Microwave Gate-Recessed AlGaN/AlN/GaN MOS-HEMT With 73% Power-Added Efficiency

Theoretical Investigation of Performance Enhancement in GeSn/SiGeSn Type-II Staggered Heterojunction Tunneling FET

Comparative Study of Negative Capacitance Ge pFETs With HfZrOx Partially and Fully Covering Gate Region

Investigation of oxidation process in self-terminating gate recess wet etching technique for AlGaN/GaN normally-off MOSFETs

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Tunable schottky barrier in blue phosphorus–graphene heterojunction with normal strain

Preparation of ultra-thin and high-quality WO3 compact layers and comparision of WO3 and TiO2 compact layer thickness in planar perovskite solar cells

The Effect of 3-MeV Proton Irradiation on the Performance of InGaN/GaN MQWs Solar Cells

Influence of PbCl2 content in PbI2 solution of DMF on the absorption, crystal phase, morphology of lead halide thin films and photovoltaic performance in planar perovskite solar cells

Investigation of GaAsBi/GaAsN Type-II Staggered Heterojunction TFETs with the Analytical Model

Multiferroics for Spintronics

High-Performance Microwave Gate-Recessed AlGaN/AlN/GaN MOS-HEMT With 73% Power-Added Efficiency

Theoretical Investigation of Performance Enhancement in GeSn/SiGeSn Type-II Staggered Heterojunction Tunneling FET

Comparative Study of Negative Capacitance Ge pFETs With HfZrOx Partially and Fully Covering Gate Region

Investigation of oxidation process in self-terminating gate recess wet etching technique for AlGaN/GaN normally-off MOSFETs