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نمایش تعداد 1-10 از 11

Non-quasi-static small-signal modeling and analytical parameter extraction of SOI FinFETs

نوع: Journal Paper

نویسنده : In Man Kang; Hyungcheol Shin

سال: 2006

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A simple and analytical parameter-extraction method of a microwave MOSFET

نوع: Journal Paper

نویسنده : Ickjin Kwon; Minkyu Je; Kwyro Lee; Hyungcheol Shin

سال: 2002

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Device Investigation of Nanoplate Transistor With Spacer Materials

نوع: Journal Paper

نویسنده : Hyungwoo Ko; Myounggon Kang; Jongwook Jeon; Hyungcheol Shin

سال: 2019

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Extraction of trap energy and location from random telegraph noise in gate leakage current (Ig RTN) of metal–oxide semiconductor field effect transistor (MOSFET)

نوع: Journal Paper

نویسنده : Heung-Jae Cho; Sanghoon Lee; Byung-Gook Park; Hyungcheol Shin

سال: 2010

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Analysis of Electrothermal Characteristics of GAA Vertical Nanoplate-Shaped FETs

نوع: Journal Paper

نویسنده : Dokyun Son; Ilho Myeong; Hyunsuk Kim; Myounggon Kang; Jongwook Jeon; Hyungcheol Shin

سال: 2018

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Analysis on Self-Heating Effects in Three-Stacked Nanoplate FET

نوع: Journal Paper

نویسنده : Hyunsuk Kim; Dokyun Son; Ilho Myeong; Myounggon Kang; Jongwook Jeon; Hyungcheol Shin

سال: 2018

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Separation of Corner Component in TAT Mechanism in Retention Characteristics of Sub 20-nm NAND Flash Memory

نوع: Journal Paper

نویسنده : Kyunghwan Lee; Myounggon Kang; Seongjun Seo; Duckseoung Kang; Dong Hua Li; Yuchul Hwang; Hyungcheol Shin

ناشر: IEEE

سال: 2014

Probability Level Dependence of Failure Mechanisms in Sub-20 nm NAND Flash Memory

نوع: Journal Paper

نویسنده : Duckseoung Kang; Kyunghwan Lee; Myounggon Kang; Seongjun Seo; Dong Hua Li; Yuchul Hwang; Hyungcheol Shin

ناشر: IEEE

سال: 2014

Analysis of failure mechanisms in erased state of sub 20-nm NAND Flash memory

نوع: Conference Paper

نویسنده : Kyunghwan Lee; Duckseoung Kang; Hyungcheol Shin; Sangjin Kwon; Shinhyung Kim; Yuchul Hwang

ناشر: IEEE

سال: 2014

A novel gated transmission line method for organic thin film transistors

نوع: Journal Paper

نویسنده : Keum-Dong Jung; Byeong-Ju Kim; Yoo Chul Kim; Byung-Gook Park; Hyungcheol Shin; Jong Duk Lee

سال: 2007

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Non-quasi-static small-signal modeling and analytical parameter extraction of SOI FinFETs

A simple and analytical parameter-extraction method of a microwave MOSFET

Device Investigation of Nanoplate Transistor With Spacer Materials

Extraction of trap energy and location from random telegraph noise in gate leakage current (Ig RTN) of metal–oxide semiconductor field effect transistor (MOSFET)

Analysis of Electrothermal Characteristics of GAA Vertical Nanoplate-Shaped FETs

Analysis on Self-Heating Effects in Three-Stacked Nanoplate FET

Separation of Corner Component in TAT Mechanism in Retention Characteristics of Sub 20-nm NAND Flash Memory

Probability Level Dependence of Failure Mechanisms in Sub-20 nm NAND Flash Memory

Analysis of failure mechanisms in erased state of sub 20-nm NAND Flash memory

A novel gated transmission line method for organic thin film transistors

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Non-quasi-static small-signal modeling and analytical parameter extraction of SOI FinFETs

A simple and analytical parameter-extraction method of a microwave MOSFET

Device Investigation of Nanoplate Transistor With Spacer Materials

Extraction of trap energy and location from random telegraph noise in gate leakage current (Ig RTN) of metal–oxide semiconductor field effect transistor (MOSFET)

Analysis of Electrothermal Characteristics of GAA Vertical Nanoplate-Shaped FETs

Analysis on Self-Heating Effects in Three-Stacked Nanoplate FET

Separation of Corner Component in TAT Mechanism in Retention Characteristics of Sub 20-nm NAND Flash Memory

Probability Level Dependence of Failure Mechanisms in Sub-20 nm NAND Flash Memory

Analysis of failure mechanisms in erased state of sub 20-nm NAND Flash memory

A novel gated transmission line method for organic thin film transistors