Search

نمایش تعداد 1-6 از 6

Fundamentals of nanoscale film analysis

نوع: Ebook

نویسنده : Alford T.L.; Feldman L.C.; Mayer J.W.

ناشر: Springer

سال: 2007

Request PDF

Materials Analysis by Ion Channeling. Submicron crystallography

نوع: Ebook

نویسنده : Feldman L.C.; Mayer J.W.; Picraux S.T.

ناشر: Academic Press

سال: 1982

Request PDF

Temperature-controlled surface plasmon resonance in VO _2 nanorods

نوع: Journal Paper

نویسنده : Lopez, R.; Haynes, T. E.; Boatner, L. A.; Feldman, L. C.; Haglund, Jr., R. F.

ناشر: Optical Society of America

سال: 2002

Request PDF

The influence of SiC/SiO<inf>2</inf> interface morphology on the electrical characteristics of SiC MOS structures

نوع: Conference Paper

نویسنده : Liu, L.; Jiao, C.; Xu, Y.; Liu, G.; Feldman, L.C.; Dhar, S.

ناشر: IEEE

سال: 2014

Extremely high electron mobility in Si/GexSi1-x structures grown by molecular beam epitaxy

نوع: Journal Paper

نویسنده : Mii, Y. J.; Xie, Y. H.; Fitzgerald, E. A.; Monroe, Don; Thiel, F. A.; Weir, B. E.; Feldman, L. C.

سال: 1991

Request PDF

High Channel Mobility 4H-SiC MOSFETs by Antimony Counter-Doping

نوع: Journal Paper

نویسنده : Modic, Aaron; Gang Liu; Ahyi, Ayayi C.; Yuming Zhou; Pingye Xu; Hamilton, Michael C.; Williams, John R.; Feldman, L.C.; Dhar, Sudipta

ناشر: IEEE

سال: 2014

Search

Fundamentals of nanoscale film analysis

Materials Analysis by Ion Channeling. Submicron crystallography

Temperature-controlled surface plasmon resonance in VO _2 nanorods

The influence of SiC/SiO<inf>2</inf> interface morphology on the electrical characteristics of SiC MOS structures

Extremely high electron mobility in Si/GexSi1-x structures grown by molecular beam epitaxy

High Channel Mobility 4H-SiC MOSFETs by Antimony Counter-Doping

نویسنده

ناشر

سال

کلیدواژه

نوع

زبان

نوع محتوا

عنوان ناشر

Search

Filters

Fundamentals of nanoscale film analysis

Materials Analysis by Ion Channeling. Submicron crystallography

Temperature-controlled surface plasmon resonance in VO _2 nanorods

The influence of SiC/SiO<inf>2</inf> interface morphology on the electrical characteristics of SiC MOS structures

Extremely high electron mobility in Si/GexSi1-x structures grown by molecular beam epitaxy

High Channel Mobility 4H-SiC MOSFETs by Antimony Counter-Doping